A dual temperature method has been developed for subtracting the 77 K thermally smoothed background from 4.2 K inelastic electron tunneling spectra of ultrathin dielectric metal-insulator-semiconductor junctions. A mode resolving method applied to the remaining spectrum clearly identifies electrode and insulator vibrational modes. The ability to track these relative mode positions and amplitudes shows promise as a unique interface analysis and process diagnostic method. Results are reported on polycrystalline silicon gate, 1.5-nm-thick oxide devices fabricated on 1–10 Ω cm, N-type, (100) silicon substrates by a standard industrial process sequence.

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report of work frequency, which we call the "ferromagnetoelastic resonance condition. " The above facts have made it possible to develop a self-consistent approximate method, which greatly simplifies the mathematical treatment without sacrificing the physical model. The agreement between the approximate and exact calculations is excellent.

In Paper I we presented a formal treatment of ferromagnetoelastic resonance (FMER) in thin films. In the present paper, this method is applied to the calculation of resonance lines of nickel at room temperature and at 25.92 GHz, a K-band frequency. It is shown that the FMER conditions are the following: (i) The film thickness nearly equals an odd-integral number of half-wavelengths of the elastic wave at the ferromagnetic-resonance frequency under the spin-unpinned and traction-free boundary conditions, or under the spin-pinned and traction-free boundary conditions; (ii) the film thickness nearly equals an even-integral number of half-wavelengths of the elastic wave under the spin-pinned and deformation-free boundary conditions. The thickness range over which the linewidth enhancement occurs is about 3% of the FMER thickness. The effect of the elastic damping on the linewidth enhancement is discussed. The angular dependence of the linewidth is examined in detail, along with the resonance-frequency shift and line shape. Finally, the relationship of the FMER problem to that of phonon generation is discussed briefly.

We have measured in-plane and out-of-plane ferromagnetic resonance linewidths of single-crystal Ni platelets at 25.92 and 9.42 GHz. It is observed that the intrinsic linewidth of these samples is anisotropic at 25.92 GHz, exhibiting cubic crystalline anisotropy rather than the geometrical symmetry of the sample. We propose that the anisotropic part of the intrinsic linewidth is due to direct relaxation of the magnetic energy to the lattice.