No abstract

Silicon dioxide has been deposited from a reaction involving silane and carbon dioxide. Hydrogen and argon were used as carrier gases. Growth rates were measured from 700° to 1100°C. The choice of carrier gas had a pronounced effect on the growth rate at low temperatures. Etch rates, dielectric loss, and infrared spectra are reported. Interface charge properties are shown under certain conditions to be stable and hysteresis free with typical NFB normalvalues of 1–3×1011 normalcharge/cm2 .