The Preparation and Properties of Silica Films Deposited from Silane and Carbon Dioxide

Abstract

Silicon dioxide has been deposited from a reaction involving silane and carbon dioxide. Hydrogen and argon were used as carrier gases. Growth rates were measured from 700° to 1100°C. The choice of carrier gas had a pronounced effect on the growth rate at low temperatures. Etch rates, dielectric loss, and infrared spectra are reported. Interface charge properties are shown under certain conditions to be stable and hysteresis free with typical NFB normalvalues of 1–3×1011 normalcharge/cm2 .

Formation of Silica Films on Silicon Using Silane and Carbon Dioxide

“…In the etch rate experiments, the oxide was considered to be completely removed when the wafer surface became completely hydrophobic. Our etching results do not agree with those published by Swann and Pyne (4). Their CVD etch rates are all greater than those of thermally grown oxide, with the maximum etch rate occurring for films deposited at 900~ This discrepancy may be a result of their reactor design since upstream decomposition of the, gases may have occurred and/or their films may have been less dense.…”

“…HS + COs --H20 + CO [4] and Sill4 + 2H20 --SiO2 + 4H2 [5] Swann and Pyne (4) used argon as a carrier gas to demonstrate that the reaction does not proceed by the water-gas reaction alone. Their results showed an even greater deposition rate with argon as the carrier gas rather than hydrogen.…”