P r i t c h a r d , J. A. C a r t e r Oak Ridge National Laboratory Oak Ridge, Tennessee 37830 ABSTRACT The method uses b a s i c anion r e s i n t o adsorb plutonium and uranium from 7-8 8 €NOJ s o l u t i o n s containing dissolved s p e n t r e a c t o r f u e l s . A f t e r e q u i l i b r a t i n g t h e r e s i n with t h e s o l u t i o n , a s i n g l e bead is used t o determine t h e i s o t o p i c composition of plutonium and uranium on s a m p l e s i z e s as small as 10 t o 10 g of each element per bead. I s o t o p i c measurements are e s s e n t i a l l y f r e e of i s o b a r i c i n t e r f e r e n c e s and f i s s i o n product contamination i n t h e mass spectrometer is eliminated. A very small a l i q u o t -6 of d i s s o l v e r s o l u t i o n containing 10 g of U and g of Pu i s s u f f i c i e n t sample f o r chemically preparing s e v e r a l r e s i n beads. A single prepared bead is loaded onto a rhenium filament and analyzed in a two-stage m a s s spectrometer using pulse counting f o r ion d e t e c t i o n t o o b t a i n t h e high s e n s i t i v i t y required. t o p i c abundances, can b e determined by i s o t o p e d i l u t i o n . Other areas where t h e method may be u s e f u l a r e : and f o r t r a c e d e t e c t i o n of contamination on r e a c t o r p a r t s . -9 -10 T o t a l q u a n t i t y of t h e elements, i n a d d i t i o n t o isoin plutonium production, isotope s e p a r a t i o n s , 563CopyrightO1974 by Marcel Dekker, Inc. All Rights Reserved. Neither this work nor any port may be reproduced or transmitted in any form or by any means, electronic or mechanicol, including photocopying, microfilming, and recording, or by any information storage ond retrieval system, without permission in writing from the publisher.

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Annealing of ion implantation damage and concomitant electrical activation of dopants, depth profiles, and lattice location of dopants have been studied in arsenic and boron-implanted specimens after rapid thermal annealing. A ‘‘complete’’ annealing of displacement damage with full electrical activation of dopants and profile broadening less than 100 Å can be attained for shallow implants whereas some extended defects are retained for deep implants. Mechanisms of rapid thermal annealing and its implications in solid state device fabrication are discussed.

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