The minority-carrier lifetime has been measured by time-resolved photoluminescence in epitaxial films of GaAs grown by metalorganic chemical vapor deposition. The measured lifetimes in thicker devices are 4 to 6 times the theoretical or radiative lifetime. These long lifetimes are the result of photon recycling or self-generation of the self-absorbed radiation.

This paper presents a simulation analysis of distributed Bragg reflectors (DBR's) and their affect on the characteristics of vertical-cavity surface-emitting lasers (VCSEL's). The SimWindows semiconductor device simulator models the close interaction between electrical, optical, and thermal processes present in VCSEL's. This simulator is used to examine the electrical characteristics of some simple DBR designs. Due to the different transport characteristics of electrons and holes, these results will show that n-type DBR designs must be different than p-type designs in order to achieve the best operating characteristics for the overall laser. This analysis will demonstrate the improvement in the characteristics by comparing the simulation results of a standard VCSEL with the results of a VCSEL using improved DBR designs. Index Terms-Distributed Bragg reflector lasers, optoelectronic devices, quantum-well lasers, semiconductor device modeling, semiconductor device thermal factors. NOMENCLATURE. Electron and hole Richardson constants (A cm K). Spontaneous recombination constant (cm s). Electrostatic displacement (C cm). Conduction and valence band edges (eV). Electron and hole quasi-Fermi levels (eV). Bandgap (eV). Electron and hole stimulated emission energies (eV). Normalized stimulated electromagnetic field (cm). Local and maximum local gains (cm). , Planck Constant (J s).

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