Modeling submicrometer GaAs MESFETs using PISCES with an apparent gate-length-dependent velocity-field relation

Fardi, Hamid; Hayes, R.E.

doi:10.1109/16.141251

Cited by 4 publications

(5 citation statements)

References 12 publications

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“…The peak average kinetic energy of electrons calculated is about 0.7 eV comparable with Monte Carlo result, although it is shifted due to velocity-field relationship. We have used a fileddependent mobility relationship (Fardi and Hayes, 1992). We conclude that our model is somewhat limited because the mobility model is independent of the carrier-temperature.…”

Section: Ballistic Diodementioning

confidence: 99%

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Detailed formulation of energy balance equations in single quantum well devices

Fardi

2002

COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering

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An energy balance equation model coupled with drift-diffusion transport equations are solved in heterojunction p-i-n diodes with embedded single quantum well to model hot electron effects. A detailed formulation of hot electron transport is presented. In the well, the carrier energy levels are estimated from the analytical expressions applied to a quantum well with finite height. Both bound and free carriers are modeled by Fermi-Dirac statistics. Both size quantization and the two dimensional density of states in the well are considered. Thermionic emission is applied to the heterojunctions and quantum wells boundary. Energy transfer among the charge carriers and crystal lattice is modeled by an energy relaxation lifetime. Two sets of devices are simulated. First, the simulated kinetic energy and carrier density profiles were compared with published Monte Carlo results on an GaAs n þ /n/n þ diode. Second, the current-voltage characteristics of an embedded single quantum well AlGaAs/GaAs p-i-n structure was compared with measured data. Both comparisons are satisfactory and demonstrate the usefulness of the model for studying quantum well structures.

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Section: Ballistic Diodementioning

confidence: 99%

“…Not shown is the electron quantized energy level, calculated at 0.0254 eV above the conduction data dark I-V characteristics of a single QW Al 0.34 Ga 0.66 As/GaAs p-i-n photodiode. The measured data is taken from Fardi and Hayes (1992). An energy relaxation lifetime 1ps and a SRH recombination lifetime of 1ns were used…”

Section: Algaas/gaas P-i-n Quantum Wellmentioning

confidence: 99%

Detailed formulation of energy balance equations in single quantum well devices

Fardi

2002

COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering

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“…Note that the channel current I d in ( 12) is a function of s through y 1 and y 2 described by (7) and (8). So long as the gate contact is devoid of an interfacial oxide layer and interface states, the evaluation of the channel current density is straightforward.…”

Section: Features Of the Drain Current-voltage Characteristicsmentioning

confidence: 99%

“…The effect of the presence of trapping states on the electrical characteristics of metal-semiconductor field effect transistors has been the subject of considerable interest in the recent past [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. So far two types of state have been considered for the purpose of device modelling, namely, the deep-impurity states in the semiconductor [1][2][3][4] and interface states at the gate contact of the device [12][13][14].…”

Section: Introductionmentioning

confidence: 99%

“…Horio et al [3,4] have presented a two-dimensional numerical model for drain characteristics in accounting for the drain current transient in the presence of deep levels in short-channel devices. The role of gate length shortening has been studied by several workers [5][6][7][8]. Moreover, there is a recent trend to study the temperature dependence of the device characteristics [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

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Effect of deep-level impurities on the drain characteristics of short-channel metal-semiconductor field effect transistors

Chattopadhyay¹,

Majumdar²

1998

Semicond. Sci. Technol.

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The role of deep-level impurities in the drain characteristics of a short-channel metal-semiconductor field effect transistor has been investigated. The drain current of the device has been evaluated for different values of deep-level density and at different temperatures ranging from 300 to 400 K. The presence of deep levels gives rise to an excess drain current resulting from the electronic excitations from the defect levels. The increase in the temperature enhances the current due to increasing ionization of the defects. An analytical expression for the channel conductance is also derived and it is found to be a function of deep-level concentration besides other nonidealities such as interface states and interfacial oxide layer. The effect of gate length shortening also reveals significant changes in the current and conductance.

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Effect of interface states on the dc characteristics of short channel metal-semiconductor field effect transistor

Majumdar

Chattopadhyay

1997

Applied Surface Science

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Modeling submicrometer GaAs MESFETs using PISCES with an apparent gate-length-dependent velocity-field relation

Cited by 4 publications

References 12 publications

Detailed formulation of energy balance equations in single quantum well devices

Detailed formulation of energy balance equations in single quantum well devices

Effect of deep-level impurities on the drain characteristics of short-channel metal-semiconductor field effect transistors

Effect of interface states on the dc characteristics of short channel metal-semiconductor field effect transistor

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