Gallium-nitride (GaN) based light-emitting diodes (LEDs) are highly-efficient sources for general purpose illumination. Visible light communications (VLC) uses these sources to supplement existing wireless communications by offering a large, licence-free region of optical spectrum. Here we report on progress in the development of micro-scale GaN LEDs (micro-LEDs), optimized for VLC. These blue-emitting micro-LEDs are shown to have very high electrical-to-optical modulation bandwidths, exceeding 800 MHz. The data transmission capabilities of the micro-LEDs are illustrated by demonstrations using on-off-keying (OOK), pulse-amplitude modulation (PAM) and orthogonal frequency division multiplexing (OFDM) modulation schemes to transmit data over free space at rates of 1.7, 3.4 and 5 Gbps, respectively.

Visible light communication (VLC) is a promising solution to the increasing demands for wireless connectivity. Gallium nitride micro-sized light emitting diodes (micro-LEDs) are strong candidates for VLC due to their high bandwidths. Segmented violet micro-LEDs are reported in this work with electrical-to-optical bandwidths up to 655 MHz. An orthogonal frequency division multiplexing-based VLC system with adaptive bit and energy loading is demonstrated, and a data transmission rate of 11.95 Gb/s is achieved with a violet micro-LED, when the nonlinear distortion of the micro-LED is the dominant noise source of the VLC system. A record 7.91 Gb/s data transmission rate is reported below the forward error correction threshold using a single pixel of the segmented array when all the noise sources of the VLC system are present.

Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 10 6 cd/m 2 .

Temperature-dependent trends in radiative and Auger recombination coefficients have been determined at different injection carrier concentrations using InGaN micro-light emitting diodes 40 μm in diameter. The differential lifetime was obtained first from the measured modulation bandwidth and was then employed to calculate the carrier concentration in the quantum well active region. When the temperature increases, the carrier concentration increases, but both the radiative and Auger recombination coefficients decrease. In addition, the temperature dependence of radiative and Auger recombination coefficients is weaker at a higher injection carrier concentration, which is strongly related to phase space filling

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