The Raman scattering from Cd& Zn Se and Cd& Mn"Se, grown by molecular-beam epitaxy on (001) GaAs substrates, shows zone-center optical phonons characteristic of a zinc-blende structure, indicating that these epilayers represent the cubic phase of these materials which in the bulk crystallize only in the wurtzite form. The variation of the frequency of the zone-center optical phonons as a function of composition x shows a "two-mode" behavior in Cd, "Mn Se and a pattern intermediate between "two-mode" and "one-mode" in Cd& Zn Se. The modifiedrandomelementisodisplacement model provides a satisfactory basis for these patterns. In the case of Cd& Mn Se, the large Raman shifts associated with the spin Aip of donor-bound electrons and the huge Zeeman shifts of an excitonic component observed in photoluminescence (including saturation at high magnetic fields and low temperatures), show that the large sp-d exchange interaction characteristic of diluted magnetic semiconductors is manifested also in the zinc-blende phase of this alloy.
We have investigated the epitaxial growth of Zn1−x CdxSe epilayers and ZnSe/Zn1−x CdxSe superlattices (0≤x≤1) on (100)GaAs. Although thick epilayers of Zn1−x CdxSe are prone to defect formation with increasing Cd content, the structural and optical characteristics improve remarkably when Zn1−x CdxSe is in the form of thin layers within ZnSe/Zn1−x CdxSe superlattices. High quality superlattices can be grown for x≤0.35. The characterization of these systems using transmission electron microscopy, x-ray diffraction, reflectivity, and photoluminescence is reported.
Optical transitions to abovebarrier quasibound states in asymmetric semiconductor heterostructures Appl.Lifetime of the quasibound state in the quantum well in a doublebarrier structure with a localized imaginary potential A new method for solving the groundstate problem in arbitrary quantum wells: Application to electronhole quasibound levels in quantum wells under high electric field
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