No abstract

No abstract

No abstract

Abstract

Dislocations in Gal-~AI~As:Si LED's were studied and found to have a pronounced effect upon the external quantum efficiency of the diodes. A simple theoretical model, based on the postulation that the dislocations act as effective nonradiative recombination centers, is proposed to explain the experimental results. It is observed that the dislocation configuration in the epitaxial layers copies that of the GaAs substrate wafers, and that " screening substrate wafers is extremely useful in the consistent fabrication of high efficiency LED's.* Electrochemical Society Active Member.