A nonfluorinated b-diketonate precursor, bis(t-butylacetoacetato)Cu(II) or Cu(tbaoac) 2 , was synthesized by modifying bis(dipivaloylmethanato)Cu(II) or Cu(dpm) 2 for chemical vapor deposition (CVD) of copper. The complex was characterized by a variety of techniques, such as melting point determination, mass spectrometry, infrared spectroscopy, elemental analysis, thermogravimetric and differential thermal analysis, and x-ray diffraction. Cu(tbaoac) 2 has a higher sublimation rate than Cu(dpm) 2 over the temperature range 90-150 ± C. Pyrolysis of Cu(tbaoac) 2 leads to the formation of copper films at 225 ± C, compared to 330 ± C for Cu(dpm) 2 . As-deposited copper films were highly dense, mirror-bright, adhered strongly to SiO 2 , and showed a resistivity of less than 2.9 mV-cm at a thickness as low as 1300Å. A possible mechanism for the decomposition of the ligand tbaoac has been proposed.

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A successful single step ECD of pure CuInSe2 and Mn2+ doped CuInSe2 thin films was carried out. 5 mole% Mn doped CuInSe2 thin film-based solar cells exhibit better PCE.

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