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Articles you may be interested inThermodynamic considerations in the stability of binary oxides for alternative gate dielectrics in complementary metal-oxide-semiconductors J. Vac. Sci. Technol. B 22, 791 (2004); 10.1116/1.1688357 Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology J. Appl. Phys. 92, 7266 (2002); 10.1063/1.1521517 Bistable microelectrothermal actuator in a standard complementary metal-oxide-semiconductor process New aspects of nanopotentiometry for complementary metal-oxide-semiconductor transistors 0.1μm complementary metal-oxide-semiconductors and beyondWe report different types of vacuum microsensors ͑size Ͻ500 m͒. The devices were fabricated with a standard complementary metal-oxide-semiconductor integrated circuit process followed by silicon bulk micromachining or surface micromachining. Two sensors are thermal, and a third type is resonant. Their pressure response results from the pressure dependent dissipation of energy or momentum to the surrounding gas. Different designs with sensitive ranges from 1 to 10 6 Pa are demonstrated. The sensor responses are modeled using kinetic gas theory, with the conclusion that a typical dissipation length defined by the device geometry determines the useful pressure range.