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Scanning tunneling spectroscopy in the shell-filling regime was carried out at room temperature to investigate the size dependence of the band gap and single-electron charging energy of single Si quantum dots (QDs). The results are compared with model calculation. A 12-fold multiple staircase structure was observed for a QD of about 4.3 nm diameter, reflecting the degeneracy of the first energy level, as expected from theoretical calculations. The systematic broadening of the tunneling spectroscopy peaks with decreasing dot diameter is attributed to the reduced barrier height for smaller dot sizes and to the splitting of the first energy level.

FinFET integration challenges and solutions are discussed for the 22 nm node and beyond. Fin dimension scaling is presented and the importance of the sidewall image transfer (SIT) technique is addressed. Diamond-shaped epi growth for the raised source-drain (RSD) is proposed to improve parasitic resistance (R para ) degraded by 3-D structure with thin Si-body. The issue of V t -mismatch is discussed for continuous FinFET SRAM cell-size scaling.IEDM09-290 12.1.2

Highly scaled FinFET SRAM cells, of area down to 0.128μm 2 , were fabricated using high-κ dielectric and a single metal gate to demonstrate cell size scalability and to investigate V t variability for the 32 nm node and beyond. A single-sided ion implantation (I/I) scheme was proposed to reduce V t variation of Fin-FETs in a SRAM cell, where resist shadowing is a great issue. In the 0.187μm 2 cell, at V d = 0.6 V, a static noise margin (SNM) of 95 mV was obtained and stable read/write operations were verified from N-curve measurements. σV t of transistors in 0.187μm 2 cells was measured with and without channel doping and the result was summarized in the Pelgrom plot. With the 22 nm node design rule, FinFET SRAM cell layouts were compared against planar-FET SRAM cell layouts. An un-doped FinFET SRAM cell was simulated to have significant advantage in read/write margin over a planar-FET SRAM cell, which would have higher σV t mainly caused by heavy doping into the channel region.