Ohmic contacts to n‐type silicon having resistivity of the order of 5 Ω‐cm and orientation (111) by electroless Ni‐P process were investigated under two different conditions, i.e., keeping operating temperature constant and pH variable and vice versa. It was found that the formation of Ni‐P alloy during deposition resulted in low resistance ohmic contacts to silicon with increase of P‐concentration and with heat‐treatment after deposition in both cases.

Ohmic contacts to p-type silicon having resistivity of the order of 5 ~-cm and orientation were fabricated by an electroless Ni-B process. It has been found that boron content in the deposit varies from 5-27% using sodium borohydride as the reducing agent. The contact resistance decreases as the boron content in the deposit increases with heat~treatment.

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