Cobalt-doped ZnO nanoparticles have been synthesized using a simple citrate sol-gel auto-combustion method. The XRD confirms nano-single phase and Wurtzite structure. Increased cobalt solubility from 15 to 20 % was observed in ZnO matrix due to low temperature synthesis. Room temperature paramagnetic contribution is observed for all the samples, since cobalt is a neutral dopant and no free carriers are produced. Normally, ferromagnetism is observed in ZnO due to carrier mediated interaction between transition metal ions and free carriers. Hence no ferromagnetism was observed and only paramagnetism was observed due to non-availability of free carriers for long range ferromagnetic interaction in our system. At higher doping, peak broadening of the highly intense XRD peak (101) was observed indicating formation of cobalt cluster (metal-metal) which reduces paramagnetism due to antiferromagnetic interaction and the magnetization value decreases to 0.00456 from 0.0076 emu/g. Absence of photoluminescence peak at 520 nm due to oxygen related defects also supports, the presence of paramagnetism in our samples, since oxygen defects are the another source of ferromagnetism in ZnO. Indirect evidence for the presence of cobalt clustering is also obtained from the photoluminescence studies which lead to concentration quenching of peaks. Photoluminescence studies exhibit NBE peak at 412 nm and defect peaks at 471 and 672 nm. The intensity of red emission peak at 672 nm remains constant whereas the intensity of the peaks at 412 and 471 nm increases and then decreases due to doping induced disorder leading to concentration quenching.

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Thermal ionization induced metallic to semiconductor (MST) transition occurring at 460 K for Zn0.97Al0.03O, 463 K for Zn0.94Al0.03Li0.03O, and 503 K for Zn0.91Al0.03Li0.03Mn0.03O has been found in the sol-gel synthesized (using hexamethylenetetramine), trivalent doped (Al, Mn) ZnO codoped with lithium. Increase in the thermally ionized carrier concentration due to Al doping is responsible for near band edge (NBE) peak shift causing Fermi level to move into conduction band making it metallic consistent with resistivity results. Free carrier (thermally activated) neutralization with ionized donor is responsible for semiconducting nature, which is supported from the free carrier screening produced energy shift in the NBE of photoluminescence peak. Furthermore, independently band gap shrinkage is also obtained from UV-Visible studies confirming localization induced MST. An anti-correlation is found between defect density (DLE) and room temperature ferromagnetism (RTFM) indicating intrinsic defects are not directly responsible for RTFM.

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