Abstract:Thermal ionization induced metallic to semiconductor (MST) transition occurring at 460 K for Zn0.97Al0.03O, 463 K for Zn0.94Al0.03Li0.03O, and 503 K for Zn0.91Al0.03Li0.03Mn0.03O has been found in the sol-gel synthesized (using hexamethylenetetramine), trivalent doped (Al, Mn) ZnO codoped with lithium. Increase in the thermally ionized carrier concentration due to Al doping is responsible for near band edge (NBE) peak shift causing Fermi level to move into conduction band making it metallic consistent with res… Show more
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