Experimental and theoretical analysis of ZnO/Au/ZnO transparent conducting thin films

He, Xiaoxiao; Wang, Wenjun; Li, Shuhong; Liu, Yunlong; Zheng, Wanquan; Shi, Qiang; Luo, Xin

doi:10.1016/j.vacuum.2015.06.015

Cited by 12 publications

(5 citation statements)

References 15 publications

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“…Sandwiched ZnO/Metal/ZnO multilayer thin film combining metal with a semiconductor can effectively improve the electrical conductivity without reducing the optical transmittance [5] because the metal in the middle layer can conduct electrons in order to reduce the resistivity. Various metal-sandwich ZnO multilayers, such as ZnO/Ag/ZnO [6], ZnO/Au/ZnO [7], ZnO/Al/ZnO [8] and ZnO/Cu/ZnO [9][10][11][12], have been developed. Due to the positive effect of copper in improving electrical conductivity and optical properties, ZnO(Cu) sandwiched multilayer has attracted much interest.…”

Section: Introductionmentioning

confidence: 99%

Influence of Annealing Temperature on Optical Properties of Sandwiched ZnO/Metal/ZnO Transparent Conductive Thin Films

et al. 2022

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Two sandwiched ZnO/Metal/ZnO transparent conductive thin films, 50nm ZnO/Cu/50nm ZnO (abbreviated as ZnO(Cu)) and 50nm ZnO/Ti/Cu/Ti/50nm ZnO (abbreviated as ZnO(Ti/Cu)) were deposited by magnetron sputtering technology. The comparative analysis of experiment results shows that the introduction of the Ti layer is beneficial to the overall properties of ZnO(Ti/Cu) thin film compared to ZnO(Cu) thin film with the same metal layer thickness. The effect of the annealing temperature on the performance of the two film systems was studied. Although the carrier concentration did not always increase with annealing temperature, the sheet resistances did decrease due to the obvious increase of mobility. The transmittance of ZnO(Cu) thin films increases with annealing temperature, while that of ZnO(Ti/Cu) films increases at first and then decreases. The optical band gap of ZnO(Cu) thin films increases with temperature, but is lower than that of ZnO(Ti/Cu) thin films, whose bandgap first increases with temperature and then decreases. The figure of merit of the ZnO(Ti/Cu) film is better than that of ZnO(Cu), which shows that the overall performance of ZnO(Ti/Cu) films is better, and annealing can improve the performance of the film systems.

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Section: Introductionmentioning

confidence: 99%

Influence of Annealing Temperature on Optical Properties of Sandwiched ZnO/Metal/ZnO Transparent Conductive Thin Films

et al. 2022

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“…6 b, the work function of LNFO is calculated to be 4.75 eV that is closed to the calculated value of ITO (4.64 eV) from Fig. 6 c. Thus, the contact between LNFO and ITO is quasi-Ohmic; the contact ofAu/LNFO is Schottky-like due to the higher work function of ( eV) [ 45 ]. Under a positive voltage, electrons drift to the Au/LNFO interface and can be captured by OVs in the dissipative region near this interface.…”

Section: Resultsmentioning

confidence: 87%

Multilevel resistive switching memory in lead-free double perovskite La$$_{2}$$NiFeO$$_{6}$$ films

Qin,

Gao,

et al. 2023

Discover Nano

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Dense and flat La$$_{2}$$ 2 NiFeO$$_{6}$$ 6 (LNFO) films were fabricated on the indium tin oxide-coated glass (ITO/glass) substrate by sol–gel method. The bipolar resistive switching behavior (BRS) could be maintained in 100 cycles and remained after 30 days, indicating that the LNFO-based RS device owned good memory stability. Surprisingly, the multilevel RS characteristics were firstly observed in the Au/LNFO/ITO/glass device. The high resistance states (HRSs) and low resistance state (LRS) with the maximum ratio of $$\sim$$ ∼ 500 could be remained stably in 900 s and 130 cycles, demonstrating the fine retention and endurance ability of this LNFO-based RS device. The BRS behavior of Au/LNFO/ITO/glass devices primarily obeyed the SCLC mechanism controlled by oxygen vacancies (OVs) dispersed in the LNFO layer. Under the external electric field, injected electrons were captured or discharged by OVs during trapping or detrapping process in the LNFO layer. Thus, the resistive state switched between HRS and LRS reversibly. Moreover, the modulation of Schottky-like barrier formed at the Au/LNFO interface was contributed to the resistive states switchover. It was related to the change in OVs located at the dissipative region near the Au/LNFO interface. The multilevel RS ability of LNFO-based devices in this work provides an opportunity for researching deeply on the high density RS memory in lead-free double perovskite oxides-based devices.

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“…Au was chosen as the intermediate metal layer, not only because it has excellent conductivity and transparency, but also has stable physical and chemical properties. Besides, nano-Au film has good induced growth mechanism for the epitaxial growth of the dielectric layer, 17) and the performance of D/M/D film with Au as the intermediate layer is very stable. In order to investigate the effect of Au layer thickness on the optical and electrical properties of ZnS/Au/ ZnS (ZAZ) multilayer films, the sandwich structural ZAZ films with different Au layer thickness were prepared on quartz glass substrates by pulsed laser deposition (PLD).…”

Section: Introductionmentioning

confidence: 99%

The investigation of ZnS/Au/ZnS transparent conductive films with different Au layer thickness

Wang

Chen

et al. 2020

Jpn. J. Appl. Phys.

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ZnS/Au/ZnS (ZAZ) transparent conductive tri-layer films with different Au layer thickness have been prepared by a pulsed laser deposition technique, and the effect of Au layer thickness on the optical and electrical properties of ZAZ films has been studied in detail. As-deposited ZAZ films showed an intense X-ray diffraction peak corresponding to ZnS (111) orientation and a very weak peak belonging to the Au (111) plane. The optical transmittance first increases and then decreases with the increase of Au layer thickness, which is due to the fact that Au changes from discontinuous island-shape to near-continuous structure when Au increases from 2 to 10 nm, and when Au is above 10 nm, the reflection of Au layer is enhanced. With the increase of Au layer thickness, both the sheet resistance and the resistivity of ZAZ films decrease, and the carrier concentration and the mobility increase. When the Au layer thickness is 10 nm, ZAZ films have the best figure of merit of 2.44 × 10−3 Ω−1.

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Experimental and theoretical analysis of ZnO/Au/ZnO transparent conducting thin films

Cited by 12 publications

References 15 publications

Influence of Annealing Temperature on Optical Properties of Sandwiched ZnO/Metal/ZnO Transparent Conductive Thin Films

Influence of Annealing Temperature on Optical Properties of Sandwiched ZnO/Metal/ZnO Transparent Conductive Thin Films

Multilevel resistive switching memory in lead-free double perovskite La$$_{2}$$NiFeO$$_{6}$$ films

The investigation of ZnS/Au/ZnS transparent conductive films with different Au layer thickness

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