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The influence of Bi additions on the electrical and photoelectrical properties of amorphous (GeS) 1-х Bi х films (0 ≤ ≤ ≤ ≤ х ≤ ≤ ≤ ≤ 0.15) has been investigated. Adding Bi to amorphous GeS condensates leads to changes in the mechanism of conductivity and inversion of the conductivity type. Bi-additives reduce the activation energy of photoconductivity and photosensitivity of the GeS films. The changes of the physical properties of the films are explained considering a heterogeneous structure of the condensates and defect states in the mobility gap.

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