Optical properties of amorphous (GeS)1 − x Bi x (0 ≤ x ≤ 0.15) films and a tentative cluster model for their structure

For photovoltaic applications, undoped and Ni2+ doped Bi2S3 thin films were chemically deposited onto glass substrates at room temperature. Elemental diffraction analysis confirmed the successful Ni2+ incorporation in the range of 1.0 to 2.0 at. %, while X-ray Diffraction analysis revealed that orthorhombic crystal lattice of Bi2S3 was conserved while transferring from binary to ternary phase. Scanning electron microscopy images reported homogeneous and crack-free morphology of the obtained films. Optoelectronic analysis revealed that the bandgap value was shifted from 1.7 to 1.1 eV. Ni2+ incorporation also improved the carrier concentration, leading to higher electrical conductivity. Resultant optoelectronic behavior of ternary Bi2−x NixS3 thin films suggests that doping is proved to be an effectual tool to optimize the photovoltaic response of Bi2S3 for solar cell applications.

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Optical properties of amorphous (GeS)1 − x Bi x (0 ≤ x ≤ 0.15) films and a tentative cluster model for their structure

Cited by 2 publications

References 11 publications

The study of phase formation processes in GeS x :Bi (1 < x < 2) chalcogenide glasses

The study of phase formation processes in GeS x :Bi (1 < x < 2) chalcogenide glasses

Simplified Route for Deposition of Binary and Ternary Bismuth Sulphide Thin Films for Solar Cell Applications

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