Abstract-This paper concerns a new design of RF MEMS switch combined with an innovative process which enable low actuation voltage (<5V) and avoid stiction. First, the structure described with principal design issues, the corresponding antistiction system is presented and FEM simulations are done. Then, a short description of the process flow based on two non polymer sacrificial layers. Finally, RF measurements are presented and preliminary experimental protocol and results of anti-stiction validation is detailed. Resulting RF performances are -30dB of isolation and -0.45dB of insertion loss at 10 GHz.

This paper presents a new electrostatic MEMS (MicroElectroMechanical System) based on a single high reliability totally free flexible membrane. Using four electrodes, this structure enables four states which allowed large deflections (4µm) with low actuation voltage (7,5V). This design presents also a good contact force and improves the restoring force of the structure. As an example of application, a Single Pole Double Throw (SPDT) for 24GHz applications, based on this design, has been simulated.

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This paper presents the principle and the modeling of an innovative RF MEMS switch designed for low voltage applications, especially for mobile phones. This switch is based on a totally free flexible membrane, which is supported by pillars and actuated electrostatically by two pairs of electrodes, enabling two forced states. The main advantage of this structure is the use of a lever effect in order to provide high deflections above the transmission line even with a small gap, which explains why the actuation voltage is small compared to classical MEMS switches. The Euler-Bernoulli beam theory is applied to build an analytical 1D model with boundary conditions, which depend on the type of actuation and if pull-in is reached or not. This model is discretized and solved by the finite difference method. Then, a more accurate 3D finite element method is applied to add corrections to the first model. Once this modeling approach is validated, it is used to determine adequate geometrical parameters for the desired switch specifications. Mechanical characterizations on processed components show a pull-in voltage about 7.5 V, which is in good agreement with simulated values. RF measurements show excellent performances.

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