We report quantum Hall experiments on the plateau-insulator transition in a low mobility In.53Ga.47As/InP heterostructure. The data for the longitudinal resistance ρxx follow an exponential law and we extract a critical exponent κ = .55 ± .05 which is slightly different from the established value κ = .42±.04 for the plateau transitions. Upon correction for inhomogeneity effects, which cause the critical conductance σ * xx to depend marginally on temperature, our data indicate that the plateau-plateau and plateau-insulator transitions are in the same universality class.

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