The changes in diffusion rates of Sb, As, and P resulting from nitridation of SiO2 and direct nitridation of the silicon surface in NH3 ambient at 1100 °C are studied for times ranging from 7 min to 4.5 h. From analysis of these data we conclude that P must diffuse almost entirely by an interstitialcy mechanism at this temperature, and that previous formulations of dopant diffusion under nonequilibrium conditions may not be complete. We also determine that the effects seen during direct nitridation are better explained by a pure vacancy injection process than a pure self-interstitial depletion process, contrary to previous assertions by us and others.

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The effect of the silicon thermal nitridation processes, nitridation of SiO2 (oxynitridation), and direct nitridation of the silicon surface on boron and phosphorus diffusion is examined. It is found that oxynitridation results in enhanced diffusion of both impurities while direct nitridation of the silicon surface causes retarded diffusion for both. These phenomena are explained by the mechanisms of silicon self-interstitial injection in the case of oxynitridation and self-interstitial depletion in the case of direct nitridation.

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This paper shows the benefits of a tighter coupling between Technology CAD and Electronic Design Automation (EDA) for the design of high speed digital and analog circuits, for the design of more manufacturable systems with improved reliability, and for future technology and circuit development. Requirements for incorporating TCAD and EDA into a framework are presented.