On the basis of 1. the experimental observation of dislocation loops by means of TEM, 2. the conclusion from this that the concentration of vacancies in the dislocation loops exists at the cost of the vacancy concentration primarily present at T,, and 3. the inversion of the decomposition kinetics of Al-Zn-Mg alloys found out by means of resistivity and microhardness measurements, the effective vacancy concentration c , . ,~~ being at disposal for the GP-zone formation was found out by means of the relation tR,max --(tRVmax being the time required to reach the maximum of resistivity) and the Arrhenius plot In tR,max = f(l/T,) of the isothermal resistivity measurements. From the comparison of cv,eff with the theoretical V concentration at T, it is possible to derive statements about the loss of vacancies during and after the quench through loop formation, building-in of vacancies in GP-zones and annealing of vacancies at lattice defects.-The ideal ZnV concentration at T, (calculated by means of the Lomer equation) is sufficiently great to account for the effective vacancy concentration.-The part of cMgv in the loss concentration is rising with increasing cMg.Al-Zn-Mg alloys is caused by the ZnV diffusion.

The decomposition behaviour of two AlSc alloys (csc = 0.18; 0.36 at.%) after direct quench to room temperature and subsequent ageing at temperatures in the range 200 "C 5 T, 5 550 "C was investigated by means of isothermal resistivity measurements and TEM. In the temperature range 325 "C 5 T, 5 400 "C both alloys show independent of the Sc content an "inversion" of the decomposition kinetics, obviously caused by the transition of the coherent into the incoherent A1,Sc phase.Das Entmischungsgeschehen zweier AlSc-Legierungen (csc = 0.18; 0.36 at.%) nach direktem Abschrecken auf RT und nachfolgender Endauslagerung bei 200 "C 5 T, 550 "C wurde mittels isothermer Widerstandsmessungen und TEM untersucht. Im Temperaturintervall325 "C 5 T, 6 400 "C ist unabhangig von der jeweiligen Sc-Konzentration eine ,,Inversion" der Entmischungskinetik, hervorgerufen durch den Phaseniibergang koharent/teilkoharent, zu beobachten.

The work function of a metal gate electrode has been adjusted with the introduction of nitrogen by solid-source diffusion from an over-stoichiometric TiN1+x layer. RBS measurements have shown that measurable concentrations of nitrogen can be diffused into a 10nm Ta layer at moderate anneal temperatures (>500°C), and that this concentration increases with temperature in the range 500-1000°C. Capacitance-voltage measurements have been carried out on 10nm tantalum layers on Al2O3. These measurements have indicated that the work function of tantalum changes by -0.08eV due to the presence of the over-stoichiometric TiN1+x covering layer during anneal (800°C/30”). Similar C-V measurements have been carried out on 10nm molybdenum layers on SiO2 and on Al2O3 dielectrics. These have shown that the work function of molybdenum is substantially different for metal stacks with the TiN1+x covering layer after a similar anneal. The work function changes by -0.52eV for molybdenum on SiO2 and by -1.1eV for molybdenum on Al2O3. The results suggest great potential for molybdenum as a candidate for a single-metal dual-work function approach to integrating metal gates into future CMOS technologies.

of resistivity measurements, TEM and microhardness measurements the decomposition kinetics of A1-3 at.% Zn-1.5 at.% Mg and A1-4.5 at.% Zn-x at.% Mg (x = 0.2; 0.5; 1.0; 1.5; 2.25; 3.0) were investigated. For T, < Ta,crit < Th (Th: temperature of the rapid homogeneous nucleation) in A1-3 at.% Zn-1.5 at.% Mg and A1-4.5 at.% Zn-x at.% Mg (x = 1.0; 1.5; 2.25; 3.0) an inversion of the decomposition kinetics for T, > Tnv (qnv: inversion temperature) was established. This result can be explained with reference to the binding of excess vacancies in dislocation loops. Proceeding from the discrepancy between the experimentally estimated concentrations of vacancies bound in dislocation loops and the concentrations of free vacancies at T,, calculated by means of the Lomer equation, a model is proposed, which explains the high vacancy concentration of the loops. In terms of this model the values of the migration energy, obtained for A1-3 at.% Zn-1.5 at.% Mg in the T,-range 23 "C 5 T, 5 100 "C, and the shift of the inversion temperatures Tnv towards higher values with increasing Ta are interpreted. The same applies to the influence of the Mg content on the decomposition kinetics in A1-4.5 at.% Zn-x at.% Mg alloys. Mittels elektrischem Widerstand, TEM-und Mikroharteuntersuchungen wurde die Entmischungskinetik von A1-3 at.% Zn-1.5 at.% Mg und A1-4.5 at.% Zn-x at.% Mg (x = 0.2; 0.5; 1.0; 2.25;3.0) untersucht. Fur T, < T,,krit < T,, (T,,: Temperatur der schnellen homogenen Keimbildung) wurde fur T, > xnv (Inversionstemperatur) bei A1-3 at.% Zn-1.5 at.% Mg und A1-4.5 at.% Zn-x at.% Mg (x = 1.0; 1.5; 2.25; 3.9) eine Inversion der Entmischungskinetik festgestellt, die mit der Bindung von UberschuDleerstellen in Verletzungsloops erklart wird. Ausgehend von der Diskrepanz zwischen den experimentell abgeschatzten Leerstellenkonzentrationen in den Loops und der uber die Lomer-Gleichung berechneten Konzentration an freien Leerstellen bei T, wird ein Model1 vorgeschlagen, das die hohen Konzentrationen in Loops gebundener Leerstellen erklart. Im Rahmen dieses Modells werden die fur A1-3 at.% Zn-1.5 at.% Mg im T,-Bereich 23 "C 5 T, 5 100 "C ermittelten Wanderungsenergien EM und die Verschiebung der Inversionstemperaturen Tny zu hoheren Werten mit zunehmendem T, gedeutet, ebenso der EinfluB des Mg-Gehaltes auf die Entmischungskinetik in der Legierungsreihe A1-4.5 at.% Zn-x at.% Mg.