Ferroelectric switching dynamics of polyvinylidene fluoride (PVDF) thin films in Cu or (Ag/Cu)/PVDF/Cu capacitors are explored by varying PVDF film thickness, applied electric field amplitude (4.35-87.5 MV/m) and frequency (100 mHz-200 Hz). Comprehending spontaneous polarization and its dependence upon interfaces, an electric field is critical for organic ferroelectric memory devices. In this article, quasi-static current-voltage, and polarization-electric field measurements are used to explain the relationship between the coercive field, signal amplitude, and frequency. The observed coercivity enhancement at lower PVDF film thicknesses and with rising frequencies of the applied signal is discussed with Kolmogorov-Avrami-Ishibashi domain nucleation and growth model. The relation between domain growth and the top electrode layer is further discussed from the exponent parameters.

In this article, the structural, microstructural, and ferroelectric characteristics of polyvinylidene fluoride‐hexafluoropropylene (PVDF‐HFP) thin films in Ag/Cu/PVDF‐HFP/Cu capacitor structures have been investigated. The bottom interfaces glass or Cu/glass influence upon the PVDF‐HFP thin‐film crystal structure and microstructure have been evaluated using grazing incidence X‐ray diffractometer and atomic force microscopy. Quasi‐static current–voltage loops, the polarization versus electric field loops measured at varied applied frequencies (100 mHz–1 Hz) and electric field amplitudes (2.5–27.5 MV/m) are utilized to comprehend the ferroelectric characteristics of PVDF‐HFP thin films. Furthermore, the observed linear dependency between coercive field and frequency is linked to the homogenous domain growth model proposed by Kolmogorov‐Avrami‐Ishibashi.

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