In this article, the structural, microstructural, and ferroelectric characteristics of polyvinylidene fluoride‐hexafluoropropylene (PVDF‐HFP) thin films in Ag/Cu/PVDF‐HFP/Cu capacitor structures have been investigated. The bottom interfaces glass or Cu/glass influence upon the PVDF‐HFP thin‐film crystal structure and microstructure have been evaluated using grazing incidence X‐ray diffractometer and atomic force microscopy. Quasi‐static current–voltage loops, the polarization versus electric field loops measured at varied applied frequencies (100 mHz–1 Hz) and electric field amplitudes (2.5–27.5 MV/m) are utilized to comprehend the ferroelectric characteristics of PVDF‐HFP thin films. Furthermore, the observed linear dependency between coercive field and frequency is linked to the homogenous domain growth model proposed by Kolmogorov‐Avrami‐Ishibashi.

Rough FTO electrode interface effect upon the characteristic ferroelectric polarization parameters and switching dynamics in Ag/P(VDF‐HFP)/FTO junctions is systematically evaluated by varying electric field amplitude and frequency. Structural and microstructural studies confirm the ferroelectric phase formation of P(VDF‐HFP) on FTO surface. Tilted rectangular P‐E loops have been recorded in the applied fields ranging over 156.25–468.75 MV/m measured between 250 mHz and 5 Hz frequency ranges. Giant saturation of 21.7 μC/cm2 and remnant polarization of 34.9 μC/cm2 has been noted at low frequencies due to the influence of high electric field induced leakage currents. The coercive field, saturation and remnant polarization response with increase in electric field amplitude and frequency of the applied signal are well fitted with classic domain growth model proposed by Kolmogorov‐Avrami‐Ishibashi. A switching time scales of 32.2–693 ms has been observed for forward switching while for backward switching it is noted as 22.1–618.8 ms, when measured at frequencies from 5 Hz to 250 mHz. Furthermore, the tilted P‐E loops are attributed to the excessive leakage currents due to the high surface roughness of FTO bottom electrode.

Asymmetric electrode (Ag and indium tin oxide (ITO)) influence upon ferroelectric switching dynamics in polyvinylidene fluoride‐hexafluoropropylene (PVDF‐HFP) thin films across Ag/PVDF‐HFP/ITO capacitor structures is systematically investigated. Grazing incidence X‐Ray diffraction (GI–XRD), atomic force microscopy (AFM), and UV–visible spectroscopy are utilized to comprehend the structural and microstructural characteristics of PVDF–HFP thin films upon ITO interface. Low voltage rectified and asymmetric current–voltage (I–V) curves reveal the varied barrier potential due to the asymmetric electrodes. Typical squared hysteresis loops along with uniform domain growth model are verified from quasi‐static and dynamic ferroelectric loop measurements. Further, from low‐frequency (10 and 15 mHz) quasi‐static and dynamic (100–1000 Hz) triangular pulses, the switching time, domain dimension with respect to frequency, and amplitude of the electric field are separately evaluated and noted that smaller switching times when electron traverses from Ag to ITO electrode.

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