Asymmetric Electrode Influence upon Ferroelectric Switching Dynamics in Ag/PVDF‐HFP/ITO Capacitor Structures

Abstract

Asymmetric electrode (Ag and indium tin oxide (ITO)) influence upon ferroelectric switching dynamics in polyvinylidene fluoride‐hexafluoropropylene (PVDF‐HFP) thin films across Ag/PVDF‐HFP/ITO capacitor structures is systematically investigated. Grazing incidence X‐Ray diffraction (GI–XRD), atomic force microscopy (AFM), and UV–visible spectroscopy are utilized to comprehend the structural and microstructural characteristics of PVDF–HFP thin films upon ITO interface. Low voltage rectified and asymmetric current–voltage (I–V) curves reveal the varied barrier potential due to the asymmetric electrodes. Typical squared hysteresis loops along with uniform domain growth model are verified from quasi‐static and dynamic ferroelectric loop measurements. Further, from low‐frequency (10 and 15 mHz) quasi‐static and dynamic (100–1000 Hz) triangular pulses, the switching time, domain dimension with respect to frequency, and amplitude of the electric field are separately evaluated and noted that smaller switching times when electron traverses from Ag to ITO electrode.

Rough FTO electrode interface effect upon ferroelectric switching dynamics in Ag/P(VDF‐HFP)/FTO capacitor structures

“…[14][15][16][17] Our previous results in (Ag or Ag/Cu)/P(VDF-HFP)/(ITO or Cu) capacitor structures indicate that device functionality depends on the interfaces and varied leakage-currents are noted. 10,18 For a better device performance, smoother electrode surface, low electric field, and high frequency ferroelectric switching are desired.…”