No abstract

We present a semiconductor saturable absorber mirror mode-locked thin disk laser based on Yb:Lu(2)O(3) with an average power of 141 W and an optical-to-optical efficiency of more than 40%. The ideal soliton pulses have an FWHM duration of 738 fs, an energy of 2.4 microJ, and a corresponding peak power of 2.8 MW. The repetition rate was 60 MHz and the beam was close to the diffraction limit with a measured M(2) below 1.2.

Ultrafast thin disk laser oscillators achieve the highest average output powers and pulse energies of any mode-locked laser oscillator technology. The thin disk concept avoids thermal problems occurring in conventional high-power rod or slab lasers and enables high-power TEM 00 operation with broadband gain materials. Stable and self-starting passive pulse formation is achieved with semiconductor saturable absorber mirrors (SESAMs). The key components of ultrafast thin disk lasers, such as gain material, SESAM, and dispersive cavity mirrors, are all used in reflection. This is an advantage for the generation of ultrashort pulses with excellent temporal, spectral, and spatial properties because the pulses are not affected by large nonlinearities in the oscillator. Output powers close to 100 W and pulse energies above 10 µJ are directly obtained without any additional amplification, which makes these lasers interesting for a growing number of industrial and scientific applications such as material processing or driving experiments in high-field science. Ultrafast thin disk lasers are based on a power-scalable concept, and substantially higher power levels appear feasible. However, both the highest power levels and pulse energies are currently only achieved with Yb:YAG as the gain material, which limits the gain bandwidth and therefore the achievable pulse duration to 700 to 800 fs in It is important to evaluate their suitability for power scaling in the thin disk laser geometry. In this paper, we review the development of ultrafast thin disk lasers with shorter pulse durations. We discuss the requirements on the gain materials and compare different Yb-doped host materials. The recently developed sesquioxide materials are particularly promising as they enabled the highest optical-tooptical efficiency (43%) and shortest pulse duration (227 fs) ever achieved with a mode-locked thin disk laser.

Single crystals of Yb 3+ -doped NaGd͑WO 4 ͒ 2 with up to 20 mol % ytterbium content have been grown by the Czochralski technique in air or in N 2 +O 2 atmosphere and cooled to room temperature at different rates ͑4-250°C/h͒. Only the noncentrosymmetric tetragonal space group I4 accounts for all reflections observed in the single crystal x-ray diffraction analysis. The distortion of this symmetry with respect to the centrosymmetric tetragonal space group I4 1 / a is much lower for crystals cooled at a fast rate. Na + , Gd 3+ , and Yb 3+ ions share the two nonequivalent 2b and 2d sites of the I4 structure, but Yb 3+ ͑and Gd 3+ ͒ ions are found preferentially in the 2b site. Optical spectroscopy at low ͑5 K͒ temperature provides additional evidence of the existence of these two sites contributing to the line broadening. The comparison with the 2 F 7/2 ͑n͒ and 2 F 5/2 ͑nЈ͒ Stark energy levels calculated using the crystallographic Yb-O bond distances allows to correlate the experimental optical bands with the 2b and 2d sites. As a novel uniaxial laser host for Yb 3+ , NaGd͑WO 4 ͒ 2 is characterized also with respect to its transparency, band-edge, refractive indices, and main optical phonons. Continuous-wave Yb 3+ -laser operation is studied at room temperature both under Ti:sapphire and diode laser pumping. A maximum slope efficiency of 77% with respect to the absorbed power is achieved for the polarization by Ti:sapphire laser pumping in a three-mirror cavity with Brewster geometry. The emission is tunable in the 1014-1079 nm spectral range with an intracavity Lyot filter. Passive mode locking of this laser produces 120 fs long pulses at 1037.5 nm with an average power of 360 mW at Ϸ97 MHz repetition rate. Using uncoated samples of Yb: NaGd͑WO 4 ͒ 2 at normal incidence in simple two-mirror cavities, output powers as high as 1.45 W and slope efficiencies as high as 51% are achieved with different diode laser pump sources.

We report on efficient laser operation of high quality crystalline Yb(3+):Lu(2)O(3) in thin disk configuration. Using doping concentrations between 1 at.% to 3 at.% and disk thicknesses between 0.08mm and 0.45mm the optimum crystal parameters have been determined. Pumped at 976 nm the laser operates at 1034 nm and 1080 nm. With a 0.25mm thick 3 at.% Yb:Lu(2)O(3) disk 32.6W of output power at 45.3W incident pump power with a slope efficiency of 80% and a resulting optical-to-optical efficiency of 72% have been realized. These are the highest values in terms of slope efficiency as well as optical-to-optical efficiency for an Yb-doped thin disk laser reported so far. Using an 1mm birefringent filter continuous tuning from 987 nm to 1127 nm with more than 10Wof output power over a tuning range of 90 nm has been achieved.