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For the first time through this paper, a Static Random Access Memory using 9T SRAM, 8T SRAM and 6T SRAM has been compared using N-curve and statistical analysis which demonstrated a multi-fold performance enhancement. In this paper, 9T SRAM cell with extra transistors compared to 8T SRAM and 6T SRAM cells, is giving the higher stability (SVNM, SINM, WTV, and WTI) as compare to conventional SRAM cells. The paper analysis the variety of parameters such as stability (SVNM, SINM, WTV, and WTI), area and leakage power consumption. A comparison based study of the Cell Ratio (CR), the Pull-up-ratio (PR) with SVNM has been shown. A statistical model has been developed displaying the power histogram during the write and read cycle for the 9T SRAM cell. The 9T SRAM cell shows a much better stability, less standby power consumption and higher area as compare to 6T and 8T SRAM cell counterparts. The design is based on the 90 nm CMOS process technology. Index Terms--Cell Ratio (CR), Pull-up-ratio (PR), Static voltage noise margin (SVNM), Static current noise margin (SINM), Write trip voltage (WTV), Write trip current (WTI).

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