The negatively charged nitrogen-vacancy (NV  ) center in diamond is an attractive candidate for applications that range from magnetometry to quantum information processing. Here we show that only a fraction of the nitrogen (typically < 0.5 %) incorporated during homoepitaxial diamond growth by Chemical Vapor Deposition (CVD) is in the form of undecorated NV  centers. Furthermore, studies on CVD diamond grown on   110 oriented substrates show a near 100% preferential orientation of NV  centers along only the   111 and   111 directions, rather than the four possible orientations. The results indicate that NV centers grow in as units, as the diamond is deposited, rather than by migration and association of their components. The NV unit of the NVH  is similarly preferentially oriented, but it is not possible to determine whether this defect was formed by H capture at a preferentially aligned NV center or as a complete unit. Reducing the number of NV orientations from 4 orientations to 2 orientations should lead to increased optically-detected magnetic resonance contrast and thus improved magnetic sensitivity in ensemble-based magnetometry.

Optical microcavities and waveguides coupled to diamond are needed to enable efficient communication between quantum systems such as nitrogen-vacancy centers which are known already to have long electron spin coherence lifetimes. This paper describes recent progress in realizing microcavities with low loss and small mode volume in two hybrid systems: silica microdisks coupled to diamond nanoparticles, and gallium phosphide microdisks coupled to single-crystal diamond. A theoretical proposal for a gallium phosphide nanowire photonic crystal cavity coupled to diamond is also discussed. Comparing the two material systems, silica microdisks are easier to fabricate and test. However, at low temperature, nitrogen-vacancy centers in bulk diamond are spectrally more stable, and we expect that in the long term the bulk diamond approach will be better suited for on-chip integration of a photonic network.

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Carbon nanotube (CNT) thin-film transistor (TFT) is a promising candidate for flexible and wearable electronics. However, it usually suffers from low semiconducting tube purity, low device yield, and the mismatch between p- and n-type TFTs. Here, we report low-voltage and high-performance digital and analog CNT TFT circuits based on high-yield (19.9%) and ultrahigh purity (99.997%) polymer-sorted semiconducting CNTs. Using high-uniformity deposition and pseudo-CMOS design, we demonstrated CNT TFTs with good uniformity and high performance at low operation voltage of 3 V. We tested forty-four 2-µm channel 5-stage ring oscillators on the same flexible substrate (1,056 TFTs). All worked as expected with gate delays of 42.7 ± 13.1 ns. With these high-performance TFTs, we demonstrated 8-stage shift registers running at 50 kHz and the first tunable-gain amplifier with 1,000 gain at 20 kHz. These results show great potentials of using solution-processed CNT TFTs for large-scale flexible electronics.