Ultra-low switching power (∼1/50th–1/2250th that of a Ge2Sb2Te5 device) was obtained in a SnXTe100−X/Sb2Te3 diluted superlattice (SL) device (X = 10, 20, and 35 at. %). XRD analysis showed that there was little coexistence of the SnTe/Sb2Te3 SL, Bi2Te3-type SnSbTe-alloy and Te phases. Detailed crystallographic analysis showed that there is a high probability that the SnSbTe-alloy phase independently changed into a SL structure. This self-assembled SL structure had a vacancy layer in a specific Te layer. Some phenomenon, such as Sn switching, in the self-assembled SL might lead to the ultra-low switching power.

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