The investigation and identification of point defects in GaN is crucial for improving the reliability of lightemitting and high-power electronic devices. The RY3 defect with a characteristic emission band at about 1.8 eV is often observed in photoluminescence (PL) spectra of n-type GaN grown by hydride vapor phase epitaxy, and it exhibits unusual properties. Its emission band consists of two components: a fast (10-ns lifetime) RL3 with a maximum at 1.8 eV and a slow (100-300 μs lifetime) YL3 with a maximum at 2.1 eV and zero-phonon line at 2.36 eV. In steady-state PL measurements, the YL3 component emerges with increasing temperature from 90 to 180 K, concurrently with a decrease in the RL3 intensity. The activation energy of both processes is about 0.06 eV. In time-resolved PL, the YL3 intensity abruptly rises when the RL3 intensity begins to saturate. These and other phenomena can be explained using a model of an acceptor with two excited states. A delocalized, effective-mass state at about 0.2 eV above the valence band captures photogenerated holes. These holes transition to the ground state, which produces the RL3 component with a lifetime of ∼10 ns. Alternatively, they may nonradiatively transition over a 0.06 eV-high barrier to a localized excited state with a level at 1.13 eV above the valence band. Recombination of free electrons or electrons at shallow donors with the holes at this localized excited state is responsible for the YL3 component. The relative intensities of the RL3 and YL3 components are dictated by the probabilities of holes at the shallow excited state to transition to the ground or to the localized excited states. Transition metals and complex defects are considered as the main candidates for the RY3 center.

Typical guided-mode resonance (GMR) transmission filter design, which is based on a single ridge per period, necessitates multiple etching/fabrication steps for implementing an array of filters (having different transmission bands) on the same substrate. To address this problem, we demonstrate dual-period narrow bandpass GMR filters that offer more degrees of freedom, two periods and two fill-factors, for tuning the filter characteristics and achieving wider stop bands without changing the grating height. A set of six transmission filters with well-separated passbands in the short-wave infrared region was designed using COMSOL Multiphysics simulations and produced on the same silicon-on-quartz wafer in a single fabrication run. The 90 µ m × 90 µ m size filters exhibited passbands as narrow as 15 nm with peak-wavelength tunability over 200 nm, flat stop bands as wide as ∼ 400 n m , and peak transmittance reaching 87%. The experimental transmission spectra were in good agreement with the corresponding simulations. These findings pave the way for the realization of pixel size filter arrays for multispectral image sensors.

The effects of miniaturization on theoretically predicted performance of dual-period guided mode resonance (GMR) transmission filters, which demonstrate immense potential for multispectral imaging in short wave infrared (SWIR), have been compared with experimental findings. With reducing filter size from 112 periods (90 µm) to 12 periods (10 µm), peak transmittance (Tpeak) of simulated and measured filters reduced gradually from 84% to 55% and from 76% to 65%, respectively, with a moderate change of 1 - 3 nm in full width at half maximum (FWHM). For 6 period filters (5 µm), simulations predict drastically reduced Tpeak = 14% accompanied by increase in FWHM by 12 nm. The Tpeak value is theoretically shown to increase to 46% with FWHM reduced by 7 nm upon placing metal reflectors at the optimum positions to increase the optical path length. Our findings indicate that four 5 µm × 5 µm size filters with metal reflectors designed for different resonance wavelengths can be used to form a single, 20 µm × 20 µm mosaic pixel for SWIR multispectral imaging.

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