We demonstrate a near-infrared electro-optic modulator with a bandwidth of 3 GHz and a V(pi)L figure of merit of 0.8 V-cm using a push-pull configuration. This is the highest operating speed achieved in a silicon-polymer hybrid system to date by several orders of magnitude. The modulator was fabricated from a silicon strip-loaded slot waveguide and clad in a nonlinear polymer. In this geometry, the electrodes form parts of the waveguide, and the modulator driving voltage drops across a 200 nm slot.

We demonstrate fully-etched fiber-waveguide grating couplers with sub-wavelength gratings showing high coupling efficiency as well as low back reflections for both transverse electric (TE) and transverse magnetic (TM) modes. The power reflection coefficients for the TE and TM modes have been significantly suppressed to -16.2 dB and -20.8 dB, respectively. Focusing grating lines have also been used to reduce the footprint of the design. Our sub-wavelength grating couplers for the TE and TM modes show respective measured insertion losses of 4.1 dB and 3.7 dB with 1-dB bandwidths of 30.6 nm (3-dB bandwidth of 52.3 nm) and 47.5 nm (3-dB bandwidth of 81.5 nm), respectively.

This work presents simulation and experimental results of ultra-thin optical ring resonators, having larger Evanescent Field (EF) penetration depths, and therefore larger sensitivities, as compared to conventional Silicon-on-Insulator (SOI)-based resonator sensors. Having higher sensitivities to the changes in the refractive indices of the cladding media is desirable for sensing applications, as the interactions of interest take place in this region. Using ultra-thin waveguides (<100 nm thick) shows promise to enhance sensitivity for both bulk and surface sensing, due to increased penetration of the EF into the cladding. In this work, the designs and characterization of ultra-thin resonator sensors, within the constraints of a multi-project wafer service that offers three waveguide thicknesses (90 nm, 150 nm, and 220 nm), are presented. These services typically allow efficient integration of biosensors with on-chip detectors, moving towards the implementation of lab-on-chip (LoC) systems. Also, higher temperature stability of ultra-thin resonator sensors were characterized and, in the presence of intentional environmental (temperature) fluctuations, were compared to standard transverse electric SOI-based resonator sensors.

The authors present a robust process for fabricating passive silicon photonic components by direct-write electron beam lithography (EBL). Using waveguide transmission loss as a metric, we study the impact of EBL writing parameters on waveguide performance and writing time. As expected, write strategies that reduce sidewall roughness improve waveguide loss and yield. In particular, averaging techniques such as overlap or field shift writing reduce loss, however, the biggest improvement comes from writing using the smaller field-size option of our EBL system. The authors quantify the improvement for each variation and option, along with the tradeoff in writing time. V

We report on the design and characterization of focusing-curved subwavelength grating couplers for ultra-broadband silicon photonics optical interfaces. With implementation of waveguide dispersion engineered subwavelength structures, an ultra-wide 1-dB bandwidth of over 100 nm (largest reported to date) near 1550 nm is experimentally achieved for transverse-electric polarized light. By tapering the subwavelength structures, back reflection is effectively suppressed and grating coupling efficiency is increased to -4.7 dB. A compact device footprint of 40 µm × 20 µm is realized by curving the gratings in a focusing scheme.