We demonstrate for the first time 85nm gate length enhancement and depletion mode InSb quantum well transistors with unity gain cutoff frequency, f T , of 305 GHz and 256 GHz, respectively, at 0.5V V DS , suitable for high speed, very low power logic applications. The InSb transistors demonstrate 50% higher unity gain cutoff frequency, f T , than silicon NMOS transistors while consuming 10 times less active power.

This paper describes for the first time, a high-speed and low-power III-V p-channel QWFET using a compressively strained InSb QW structure. The InSb p-channel QW device structure, grown using solid source MBE, demonstrates a high hole mobility of 1,230cm 2 /V-s. The shortest 40nm gate length (L G ) transistors achieve peak transconductance (G m ) of 510μS/μm and cut-off frequency (f T ) of 140GHz at supply voltage of 0.5V. These represent the highest G m and f T ever reported for III-V p-channel FETs. In addition, effective hole velocity of this device has been measured and compared to that of the standard strained Si p-channel MOSFET. IntroductionThe III-V compound semiconductor quantum-well field effect transistor (QWFET) is one of the most promising device candidates for future high-speed, low-power logic applications due to its high electron mobility. Recently, highperformance III-V n-channel QWFETs have been demonstrated [1][2][3][4]. However, for implementation of CMOS logic, there is a significant challenge of identifying high mobility III-V p-channel candidates [5]. In this work, we demonstrate for the first time a high-speed and low-power III-V p-channel QWFET using a compressively strained InSb QW structure, which achieves cut-off frequency (f T ) of 140GHz at transistor gate length (L G ) of 40nm and supply voltage (V CC ) of 0.5V. This represents the highest f T ever reported for III-V p-channel FETs.

The heterogeneous integration of InSb quantum well transistors onto silicon substrates is investigated for the first time. 85 nm gate length FETs with f T ¼ 305 GHz at V ds ¼ 0.5 V and DC performance suitable for digital logic are demonstrated on material with a buffer just 1.8 mm thick. An initial step towards integrating InSb FETs with mainstream Si CMOS for high-speed, energy-efficient logic applications has been achieved.

Purpose Although medical leadership and management (MLM) is increasingly being recognised as important to improving healthcare outcomes, little is understood about current training of medical students in MLM skills and behaviours in the UK. The paper aims to discuss these issues. Design/methodology/approach This qualitative study used validated structured interviews with expert faculty members from medical schools across the UK to ascertain MLM framework integration, teaching methods employed, evaluation methods and barriers to improvement. Findings Data were collected from 25 of the 33 UK medical schools (76 per cent response rate), with 23/25 reporting that MLM content is included in their curriculum. More medical schools assessed MLM competencies on admission than at any other time of the curriculum. Only 12 schools had evaluated MLM teaching at the time of data collection. The majority of medical schools reported barriers, including overfilled curricula and reluctance of staff to teach. Whilst 88 per cent of schools planned to increase MLM content over the next two years, there was a lack of consensus on proposed teaching content and methods. Research limitations/implications There is widespread inclusion of MLM in UK medical schools' curricula, despite the existence of barriers. This study identified substantial heterogeneity in MLM teaching and assessment methods which does not meet students' desired modes of delivery. Examples of national undergraduate MLM teaching exist worldwide, and lessons can be taken from these. Originality/value This is the first national evaluation of MLM in undergraduate medical school curricula in the UK, highlighting continuing challenges with executing MLM content despite numerous frameworks and international examples of successful execution.