The effects of process variables on the growth rate and properties of insulating films grown from a hydrogen-silane-ammonia mixture have been studied. Growth rate vs. I/T is observed to have a break at 900~ coincident with an observed amorphous-polycrystalline transition. Hardness, growth rate, and refractive index are found to move toward values appropriate for silicon as the per cent ammonia is reduced. The thermal expansion coefficient can be varied from approximately that of silicon to appreciably more by increasing the per cent ammonia. A variety of other properties, such as breaking strength and Youngs' modulus were also measured and are discussed.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.210.126.199 Downloaded on 2015-06-01 to IP

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Advanced rapid thermal processing (RTP) equipment and sensors have been developed for in-situ fabrication of semiconductor devices. High-performance multi-zone lamp modules have been applied to various processes including rapid thermal oxidation (RTO), chemicalvapor deposition (CVD) of tungsten and amorphous/polycrystalline silicon, silicide formation, as well as high-temperature rapid thermal annealing (RTA). Concurrent use of multizone lamps and multi-point temperature sensors allows real-time wafer temperature control and process uniformity optimization. Specific experimental results will be presented on the multi-zone lamp modules, in-situ process control sensors, and single-wafer fabrication processes.

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Conventional semiconductor manufacturing techniques may be unable to meet technological demands in certain cases, and alternatives need to be investigated. We propose in situ sequential processing, which we define as ‘multiprocessing’, as a possible innovation. We demonstrate a specific manifestation of multiprocessing, namely the integration of a novel in situ pre-clean using anhydrous hydrogen fluoride with chemical vapor deposition of silicon, leading to the growth of high-quality single-crystal silicon epitaxy. Further, we show that the multiprocessing technology is viable for manufacturing, since it is simple, rapid, has a low thermal budget and does not suffer from cross-contamination. Finally, we discuss the possible role of multiprocessing in semiconductor manufacturing.