A Sn-doped In2O3 (ITO) electrode was deposited on Al2O3(0001) using pulsed laser deposition at different oxygen pressures to create the bottom electrode of a (Pb,La)(Zr,Ti)O3 (PLZT) capacitor. The crystallographic orientation of the ITO films was controlled via the oxygen pressure. At 600 °C the (111) peak became dominant when the O2 pressure was increased, and when the pressure reached 2.0 Pa the ITO films became preferentially (111) oriented. The remnant polarization was 58.8–90.7 and 46.0–47.5 µC/cm2 for the Pt/PLZT/ITO and ITO/PLZT/ITO capacitors, respectively; the ferroelectric properties of these capacitors were also determined.

The effects of crystallographic orientation on the ferroelectric properties of Pb(Zr,Ti)O 3 (PZT) thin films grown on (111) and (100)-oriented Pt substrates are investigated. The effects of doping PZT with species X (forming PXZT) thin films (Pb:X:Zr:Ti, 113:3:30:70; X = La, Nb, or Y) using chemical solution deposition were studied. The crystallinity of all PXZT films was almost identical. The remnant polarisation of the un-doped, La-, Nb-, and Y-doped PZT capacitors with Pt(111) bottom electrodes were 133.4, 64.7, 60.2, and 98.4 µC/cm 2 , respectively. In ferroelectric capacitors with Pt(100) bottom electrodes, the remnant polarisations were 185.6, 148.1, 103.1, and 135.7 µC/cm 2 , respectively. The remnant polarisation was larger with Pt(100) than with Pt(111). The initial remnant polarisation of the un-doped PZT capacitors was larger than that of PXZT.

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