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This paper discusses the use of stuck-at fault coverage as a means of determining quality levels. Data from a part tested with both functional and scan tests is analyzed and compared to three existing theories. It is shown that reasonable predictions of quality level are possible for the functional tests, but that scan tests produce significantly worse quality levels than predicted, Apparent clustering of defects resulted in very good quality levels for fault coverages less than 99%.

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As CMOS scales down, hot carrier aging (HCA) scales up and can be a limiting aging process again. This has motivated re-visiting HCA, but recent works have focused on accelerated HCA by raising stress biases and there is little information on HCA under use-biases. Early works proposed that HCA mechanism under high and low biases are different, questioning if the high-bias data can be used for predicting HCA under use-bias. A key advance of this work is proposing a new methodology for evaluating the HCA-induced variation under use-bias. For the first time, the capability of predicting HCA under use-bias is experimentally verified. The importance of separating RTN from HCA is demonstrated. We point out the HCA measured by the commercial SourceMeasure-Unit (SMU) gives erroneous power exponent. The proposed methodology minimizes the number of tests and the model requires only 3 fitting parameters, making it readily implementable.