We investigate photoconductive terahertz (THz) emitters compatible with 1550 nm excitation for THz time-domain spectroscopy (TDS). The emitters are based on rhodium (Rh) doped InGaAs grown by molecular beam epitaxy. InGaAs:Rh exhibits a unique combination of ultrashort trapping time, high electron mobility, and high resistivity. THz emitters made of InGaAs:Rh feature an emitted THz power of 637 μW at 28 mW optical power and 60 kV/cm electrical bias field. In particular for a fiber coupled photoconductive emitter, this is an outstanding result. When these emitters are combined with InGaAs:Rh based receivers in a THz TDS system, 6.5 THz bandwidth and a record peak dynamic range of 111 dB can be achieved for a measurement time of 120 s.

Broadband terahertz spectroscopy enables many promising applications in science and industry alike. However, the complexity of existing terahertz systems has as yet prevented the breakthrough of this technology. In particular, established terahertz time-domain spectroscopy (TDS) schemes rely on complex femtosecond lasers and optical delay lines. Here, we present a method for optoelectronic, frequency-modulated continuous-wave (FMCW) terahertz sensing, which is a powerful tool for broadband spectroscopy and industrial non-destructive testing. In our method, a frequency-swept optical beat signal generates the terahertz field, which is then coherently detected by photomixing, employing a time-delayed copy of the same beat signal. Consequently, the receiver current is inherently phase-modulated without additional modulator. Owing to this technique, our broadband terahertz spectrometer performs (200 Hz measurement rate, or 4 THz bandwidth and 117 dB peak dynamic range with averaging) comparably to state-of-the-art terahertz-TDS systems, yet with significantly reduced complexity. Thickness measurements of multilayer dielectric samples with layer-thicknesses down to 23 µm show its potential for real-world applications. Within only 0.2 s measurement time, an uncertainty of less than 2 % is achieved, the highest accuracy reported with continuous-wave terahertz spectroscopy. Hence, the optoelectronic FMCW approach paves the way towards broadband and compact terahertz spectrometers that combine fiber optics and photonic integration technologies.

Today, the optimum material systems for photoconductive emitters and receivers are different. In THz reflection measurements, this leads to complicated optics or performance compromises. We present photoconductive emitters and detectors fabricated from molecular beam epitaxy (MBE) grown iron (Fe) doped InGaAs, which are well suited for a THz time-domain spectroscopy as both emitters and detectors. As a photoconductive emitter, 75 μW ± 5 μW of radiated THz power was measured. As a detector, THz pulses with a bandwidth of up to 6 THz and a peak dynamic range of 95 dB could be detected. These results are comparable to state-of-the-art THz photoconductors, which allows for simple reflection measurements without a performance decrease. The incorporation of Fe in InGaAs during MBE growth is investigated by secondary ion mass spectroscopy, Hall, and transient differential transmission measurements. Growth temperatures close to 400 °C allow for homogeneous Fe doping concentrations up to 5 × 1020 cm−3 and result in a photoconductor with an electron lifetime of 0.3 ps, a resistivity of 2 kΩ cm, and an electron mobility higher than 900 cm2 V−1 s−1. We show that iron dopants are incorporated up to a maximum concentration of 1 × 1017 cm−3 into substitutional lattice sites. The remaining dopants are electrically inactive and form defects that are anneal-stable up to a temperature of 600 °C. The fast recombination center in Fe-doped InGaAs is an unidentified defect, representing ≈0.5% of the nominal iron concentration. The electron and hole capture cross section of this defect is determined as σe = 3.8 × 10−14 cm2 and σh = 5.5 × 10−15 cm2, respectively.

Continuous wave THz (cw THz) systems define the state-of-the-art in terms of spectral resolution in THz spectroscopy. Hitherto, acquisition of broadband spectra in a cw THz system was always connected with slow operation. Therefore, high update rate applications like inline process monitoring and non-destructive testing are served by time domain spectroscopy (TDS) systems. However, no fundamental restriction prevents cw THz technology from achieving faster update rates and be competitive in this field. In this paper, we present a fully fibercoupled cw THz spectrometer. Its sweep speed is two orders of magnitude higher compared to commercial state-of-the-art systems and reaches a record performance of 24 spectra per second with a bandwidth of more than 2 THz. In the single-shot mode, the same system reaches a peak dynamic range of 67 dB and exceeds a value of 100 dB with averaging of 7 min, which is among the highest values ever reported. The frequency steps can be as low as 40 MHz. Due to the fully homodyne detection, each spectrum contains full amplitude and phase information. This demonstration of THz-spectroscopy at video-rate is an essential step towards applying cw THz systems in non-destructive, in line testing.

We carried out an experimental comparison study of the two most established optoelectronic emitters for continuous-wave (cw) terahertz generation: a uni-traveling-carrier photodiode (UTC-PD) and a pin-photodiode (PIN-PD). Both diodes are commercially available and feature a similar package (fiber-pigtailed housings with a hyper-hemispherical silicon lens). We measured the terahertz output as a function of optical illumination power and bias voltage from 50 GHz up to 1 THz, using a precisely calibrated terahertz power detector. We found that both emitters were comparable in their spectral power under the operating conditions specified by the manufacturers. While the PIN-PD turned out to be more robust against varying operating parameters, the UTC-PD showed no saturation of the emitted terahertz power even for 50 mW optical input power. In addition, we compared the terahertz transmission and infrared (IR) blocking ratio of four different filter materials. These filters are a prerequisite for correct measurements of the absolute terahertz power with thermal detectors.