Films of Sb : SnO2 have been formed by vacuum e-beam evaporation. The structural, electrical, and optical properties of these films have been investigated with respect to annealing time and temperature. After heat treatment in an oxygen atmosphere, thin films with a peak transmittance of 98% and 4–9 × 10−3 Ωcm resistivity have been obtained. The barrier heights and energy band diagrams of Sb : SnO2/Si n-n and p-n heterojunctions have been determined by C-V measurements.

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