To identify members of the translocation machinery for peroxisomal proteins, we made use of the two‐hybrid system to establish a protein linkage map centered around Pex5p from Saccharomyces cerevisiae, the receptor for the C‐terminal peroxisomal targeting signal (PTS1). Among the five interaction partners identified, Pex14p was found to be induced under conditions allowing peroxisome proliferation. Deletion of the corresponding gene resulted in the inability of yeast cells to grow on oleate as well as the absence of peroxisomal structures. The PEX14 gene product of ∼38 kDa was biochemically and ultrastructurally demonstrated to be a peroxisomal membrane protein, despite the lack of a membrane‐spanning domain. This protein was shown to interact with itself, with Pex13p and with both PTS receptors, Pex5p and Pex7p, indicating a central function for the import of peroxisomal matrix proteins, either as a docking protein or as a releasing factor at the organellar membrane.

In this paper a statistically significant study of 1096 individual GaN nanowire (NW) devices is presented. We have correlated the effects of changing growth parameters for hot-wall chemically-vapour-deposited (HW-CVD) NWs fabricated via the vapour-liquid-solid mechanism. We first describe an optical lithographic method for creating Ohmic contacts to NW field effect transistors with both top and bottom electrostatic gates to characterize carrier density and mobility. Multiprobe measurements show that carrier modulation occurs in the channel and is not a contact effect. We then show that NW fabrication runs with nominally identical growth parameters yield similar electrical results across sample populations of >50 devices. By systematically altering the growth parameters we were able to decrease the average carrier concentration for these as-grown GaN NWs ∼10-fold, from 2.29 × 10 20 to 2.45 × 10 19 cm −3 , and successfully elucidate the parameters that exert the strongest influence on wire quality. Furthermore, this study shows that nitrogen vacancies, and not oxygen impurities, are the dominant intrinsic dopant in HW-CVD GaN NWs.

Average phosphorous diffusivities after implantation in 1 0 0 germanium have been measured for long anneals (i.e., 3-10 h) at temperatures from 600 to 800 • C. Considerable dose loss after annealing is also observed and quantified for temperatures below 800 • C. A diffusion model using an extrinsic diffusivity coefficient combined with a segregation component between the germanium and the oxide, to account for dopant loss, is found to be sufficient to completely explain the observed diffusion profiles. The best-fit diffusivity and segregation coefficients are reported for this model and the diffusivities are found to be over an order of magnitude slower than those measured after rapid thermal annealing (i.e., short anneals of only a few seconds). It is proposed that this disagreement of diffusivities between short and long anneals is due to implant damage perhaps similar to well-known transient enhanced diffusion effects observed in silicon.

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