Cost reduction in optoelectronic and MEMS packaging is a key issue already today and will become even more important in the future. We developed a novel hermetic packaging technology and an optical leak detector for wafer level assembly and testing, respectively. Silicon caps (HyCap ® ) for localized hermetic sealing are manufactured using standard MEMS technology. Sensitive optoelectronic or MEMS devices are hermetically capped and tested on wafer level before dicing. This paper focuses on the optical leak detection and the hermeticity test procedure for MEMS devices and optoelectronic subassemblies on wafer level.Testing of hermeticity for enclosed volumes of smaller than 0.01 cc is a challenge as existing test procedures cannot be readily applied. To ensure maximum reliability of the package the whole range of potential leakage must be tested. We developed an optical leak test on wafer-level for low cost hermeticity testing which covers the full range from gross to very fine leak 10 -9 atm cc/s. The test set-up is based on a µScan ® profilometer with implemented pressure chamber and control. IntroductionWafer level packaging and testing for cost reduction within MEMS manufacturing is a key issue for the expected growth of the MEMS market. To reduce costs, packaging of optoelectronic subassemblies is moving to wafer level packaging, too. Whether new MEMS applications, e. g. RF and medical applications, gain market shares depends mainly on packaging and cost related issues -besides the reliability of the MEMS device itself. Many MEMS devices require hermeticity for protection of the often movable or otherwise fragile parts to ensure stable and reliable performance characteristics. Using standard leak test methods, hermeticity testing for MEMS devices with very small enclosed internal package volume is a technical challenge itself and in addition also labor intensive and costly. Typically the leak test is performed as single component or batch test. Within the trend to wafer level packaging and testing hermeticity testing methods have to follow this development and adjust the measurement technology to wafer level.Typically the leak test is divided into gross and fine leak test because different methods have to be applied to detect large or small leaks. The He fine leak test (Method 1014, MIL-STD-883) [1] is the most common test for the fine leak range. At first, the package is stored for time t b under He pressure at p w (He bombing). Afterwards it is placed into a He mass spectrometer to detect the He leaking out of the

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