Measurement tool influence on CD results on photolithographic masks

Richter, Jan; Liebe, Roman; Laske, Frank; Rudolf, Jens; Heins, Torben

doi:10.1117/12.681867

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Application Of Sem In Dimensional Metrology1

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2009

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“…It has to be clearly pointed out that not only absolute CD values but also CDU values and CD linearity values are influenced when shape details of the edge transition region are changing and the SEM image analysis does not explicitly take these changes into account. In [27] it was also shown that not only topographic differences can result in CD changes but also differences in sample material resulted in different CD bias values between different CD-SEM.…”

Section: Application Of Sem In Dimensional Metrologymentioning

confidence: 98%

Model-based SEM for dimensional metrology tasks in semiconductor and mask industry

Frase¹,

Gnieser²,

Bosse³

2009

J. Phys. D: Appl. Phys.

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The requirements on the use of scanning electron microscopy (SEM) as a measurement technique for the process control of dimensional parameters are most challenging in the production of masks and wafers in the semiconductor industry. Subtle details of SEM signal variations have to be thoroughly understood to be able to monitor and trace small process variations to changes in dimensional parameters of the features to be controlled. This paper reviews the fundamentals, special performance features and applications of existing SEM image contrast simulation packages based on Monte Carlo methods.

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Section: Application Of Sem In Dimensional Metrologymentioning

confidence: 98%