Influence of mask surface processing on CD-SEM imaging

Hauptmann, Marc; Eng, Lukas M.; Richter, Jan

doi:10.1117/12.793106

Cited by 5 publications

(3 citation statements)

References 6 publications

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“…Since these phenomena degrade the accuracy of SEM observation, they have been extensively studied by experiment and simulation. [1][2][3][4][5][6][7][8][9] Image-contrast variation is caused by a change in the efficiency of detecting emitted electrons during observation owing to the sample charging. It has been observed when a metal-insulator mixed sample [1][2][3] or SiO 2 lines on silicon 4,5) is inspected.…”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3][4][5][6][7][8][9] Image-contrast variation is caused by a change in the efficiency of detecting emitted electrons during observation owing to the sample charging. It has been observed when a metal-insulator mixed sample [1][2][3] or SiO 2 lines on silicon 4,5) is inspected. The mechanism of the variation in image contrast has been investigated by analytical and numerical simulations considering charging and discharging processes.…”

Section: Introductionmentioning

confidence: 99%

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Study on Image Drift Induced by Charging during Observation by Scanning Electron Microscope

Okai

Sohda

2012

Jpn. J. Appl. Phys.

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The mechanism of image drift in the observation of a boundary between a metal and an insulator by scanning electron microscope (SEM) is clarified by electron-trajectory simulation and experiment. In the region involving a straight boundary between a large-area metal layer and an insulating substrate, the largest image drift is expected to be observed owing to an asymmetric charging on the sample surface. The simulation result shows that a metal–insulator boundary in the SEM image shifts toward the metal part over several seconds, which is induced by a positively charged area outside of the irradiation region in the insulator part. This simulation result is confirmed to qualitatively coincide with the experimental one. In addition, we demonstrate that the direction and magnitude of the image drift can be controlled by changing the charging voltage of the insulating substrate by applying a bias voltage to the anode facing the sample surface.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Study on Image Drift Induced by Charging during Observation by Scanning Electron Microscope

Okai

Sohda

2012

Jpn. J. Appl. Phys.

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“…For an isolated chromium layer on an insulating substrate, the charging mechanism has been examined in conjunction with contrast reversion. 11,12) Those studies focused on the charging of an isolated chromium pattern with a size in the micrometer range. To our knowledge, however, there has been no study on the charging mechanism for a floating metal layer with a size of millimeter scale.…”

Section: Introductionmentioning

confidence: 99%

Charge Modeling for Metal Layer on Insulating Substrate

Okai¹,

Yano²,

Sohda³

2011

Jpn. J. Appl. Phys.

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A charging model for magnification variation in the observation of a metal pattern on an insulating substrate using a scanning electron microscope is proposed. To calculate the time evolution of charging, we replace electron trajectory with current. Negative charging of the metal layer is observed and is caused by the current from the anode, which is set above the sample, to the metal layer. The origin of the current is tertiary electrons produced by backscattered electrons colliding with the anode. By controlling tertiary-electron trajectories through the application of bias voltage to the anode, the magnification variation can be reduced to almost zero.

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