A conventional scanning electron microscope operated in transmission mode (TSEM) was used for imaging silica, gold and latex nanoparticles. Particles were applied to conventional transmission electron microscope (TEM) grids with different supporting films. A semiconductor detector capable of accomplishing both bright-field and dark-field imaging was used to record transmitted electrons. Particle diameter was determined from the images by comparing measured data with the results of corresponding Monte Carlo simulations which took into account particle and instrument properties. Measured and simulated line profiles agreed well; the method is sensitive to changes in diameter in the nano- and sub-nanometre range. It is concluded that TSEM imaging is a promising tool for dimensional characterization of nanoparticles. Necessary extensions to the technique in order to achieve traceable measurements are discussed.

The requirements on the use of scanning electron microscopy (SEM) as a measurement technique for the process control of dimensional parameters are most challenging in the production of masks and wafers in the semiconductor industry. Subtle details of SEM signal variations have to be thoroughly understood to be able to monitor and trace small process variations to changes in dimensional parameters of the features to be controlled. This paper reviews the fundamentals, special performance features and applications of existing SEM image contrast simulation packages based on Monte Carlo methods.

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