Thin film solar cells based on cadmium telluride (CdTe) are complex devices which have great potential for achieving high conversion efficiencies. Lack of understanding in materials issues and device physics slows down the rapid progress of these devices. This paper combines relevant results from the literature with new results from a research programme based on electro-plated CdS and CdTe. A wide range of analytical techniques was used to investigate the materials and device structures. It has been experimentally found that n-, i-and p-type CdTe can be grown easily by electroplating. These material layers consist of nano-and micro-rod type or columnar type grains, growing normal to the substrate. Stoichiometric materials exhibit the highest crystallinity and resistivity, and layers grown closer to these conditions show n → p or OPEN ACCESSCoatings 2014, 4 381 p → n conversion upon heat treatment. The general trend of CdCl 2 treatment is to gradually change the CdTe material's n-type electrical property towards i-type or p-type conduction. This work also identifies a rapid structural transition of CdTe layer at 385 ± 5 °C and a slow structural transition at higher temperatures when annealed or grown at high temperature. The second transition occurs after 430 °C and requires more work to understand this gradual transition. This work also identifies the existence of two different solar cell configurations for CdS/CdTe which creates a complex situation. Finally, the paper presents the way forward with next generation CdTe-based solar cells utilising low-cost materials in their columnar nature in graded bandgap structures. These devices could absorb UV, visible and IR radiation from the solar spectrum and combine impact ionisation and impurity photovoltaic (PV) effect as well as making use of IR photons from the surroundings when fully optimised.

To completely understand lithium adsorption, diffusion, and capacity on the surface of phosphorene and, therefore, the prospects of phosphorene as an anode material for high-performance lithium-ion batteries (LIBs), we carried out density-functional-theory calculations and studied the lithium adsorption energy landscape, the lithium diffusion mobility, the lithium intercalation, and the lithium capacity of phosphorene. We also carried out, for the very first time, experimental measurement of the lithium capacity of phosphorene. Our calculations show that the lithium diffusion mobility along the zigzag direction in the valley of phosphorene was about 7 to 11 orders of magnitude faster than that along the other directions, indicating its ultrafast and anisotropic diffusivity. The lithium intercalation in phosphorene was studied by considering various Li P configurations (n = 1-16) including single-side and double-side adsorptions. We found that phosphorene could accommodate up to a ratio of one Li per P atom (i.e. LiP). In particular, we found that, even at a high Li concentration (e.g. x = 1 in Li P), there was no lithium clustering, and the structure of phosphorene (when fractured) is reversible during lithium intercalation. The theoretical value of the lithium capacity for a monolayer phosphorene is predicted to be above 433 mAh g, depending on whether Li atoms are adsorbed on the single side or the double side of phosphorene. Our experimental measurement of the lithium capacity for few-layer phosphorene networks shows a reversible stable value of ∼453 mAh g even after 50 cycles. Our results clearly show that phosphorene, compared to graphene and other two-dimensional materials, has great promise as a novel anode material for high-performance LIBs.

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Electrical transport properties were studied in situ of few layer graphene subjected to plasma-induced sequential fluorination processes. Lowtemperature transport properties and Raman spectroscopy were studied ex situ after each fluorination process. As the fluorination progresses, it was found that the initial metallic behavior of graphene (with low-temperature transport properties being governed by diffusion) changes to insulating behavior where transport properties obey variable range hopping (VRH). Emergence of pronounced negative magnetoresistance (MR) for strongly fluorinated graphene was also observed. As determined by the high-temperature resistance behavior, an emergence of a small band gap is observed and the band gap is seen to increase as the fluorination progresses.

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