A novel method for designing multiband bandpass filters has been proposed in this paper. Coupling structures with both Chebyshev and quasi-elliptic frequency responses are presented to achieve dual-and triple-band characteristics without a significant increase in circuit size. The design concept is to add some extra coupled resonator sections in a single-circuit filter to increase the degrees of freedom in extracting coupling coefficients of a multiband filter and, therefore, the filter is capable of realizing the specifications of coupling coefficients at all passbands. To verify the presented concept, four experimental examples of filters with a dual-band Chebyshev, triple-band Chebyshev, dual-band quasi-elliptic, and triple-band quasi-elliptic response have been designed and fabricated with microstrip technology. The measured results are in good agreement with the full-wave simulation results.

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Differential signaling has become a popular choice for multigigabit digital applications in favor of its low-noise generation and high common-mode noise immunity. Recalling from the full-wave solution of -parameters, this paper presented a design methodology of analysis scheme to extract the equivalent circuits of discontinuities observed on the strongly coupled differential lines. Signal integrity effects of the bent differential transmission lines in a high-speed digital circuit were then simulated in the time domain. A dual back-to-back routing topology of bent differential lines to reduce the common-mode noise was further investigated. To alleviate the common-mode noise at the receiver, a novel compensation scheme in use of the shunt capacitance was also proposed. Furthermore, the comparison between the simulation and measured results validated the equivalent circuit model, coupled bends with compensation capacitance patch, and analysis approach.

This paper describes the design of millimeter-wave wide-band monolithic GaAs passive high electron-mobility transistor (HEMT) switches using the traveling-wave concept. This type of switch combined the off-state shunt transistors and series microstrip lines to form an artificial transmission line with 50-characteristic impedance. A 15-80-GHz single-pole double-throw (SPDT) switch in conjunction with quarter-wavelength impedance transformers demonstrates an insertion loss of less than 3.6 dB and an isolation of better than 25 dB. Another type of wide-band switch was designed by using a series HEMT switch to replace the quarter-wavelength transformer, and the operating band can be extended to dc. With this scheme, dc-80-GHz single-pole single-throw (SPST) and dc-60-GHz SPDT switches are also developed with compact chip size. From dc to 80 GHz, the insertion loss and isolation of the SPST switch are better than 3 and 24 dB, respectively. The SPDT switch has an insertion loss of better than 3 dB and an isolation of better than 25 dB from dc to 60 GHz. The analysis of circuit characteristics and design procedures are also included. It is concluded that the device periphery can be selected for the desired bandwidth, while the number of transistors is decided to achieve the isolation.Index Terms-High electron-mobility transistor (HEMT), switch, traveling wave.