No abstract

Some general features of the behaviour of Cu, Zn, Bi, S, Eu and Mn impurities in CdSiP2 crystals are studied by analysing photo-and electron beam-excited luminescence spectra measured in a temperature range of 1.4 to 300 K, as well as by determining their electrical parameters. The impurities are established to substitute mainly the cadmium in the crystalline lattice and to promote the formation of complexes of defects, which are radiative recombination centres. Cd vacancies as well participate in the defect complex formation processes. A radiation ascribed to interstitial Cd-type defects, is discovered in CdSiP2 crystals. From comparison with Raman scattering measurements, the direct band gap was evaluated to be 2.42 eVat 1.4 K.