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The Cameca Ion Microanalyzer has been used to analyze the surface and bulk of a number of sputtered tantalum thin films. This technique of chemical analysis has unique analytical capabilities which are based on the emission and subsequent mass analysis of characteristic secondary ions ejected by high energy (several K e V ) ion bombardment. The results obtained on sputtered tantalum films, reactively sputtered (argon.oxygen, argonsnitrogen mixtures) tantalum films, and oxidized tantalum films are presented to demonstrate these unique analytical capabilities. Quantitative analysis by this method is shown to depend on the accurate and reproducible measurement of characteristic parameters s u c h a s t h e secondary ion current of the impurity ( i a i ) and the secondary ionization yield of the impurity relative to t h e matrix (Krel). The magnitude of Krel is best determined by the use of standards.This paper describes and critically evaluates a relatively new analytical technique, Secondary Ion Emission, for localized surface and bulk thin film analysis and to present a method of performing quantitative analysis by the use of standards. This technique of chemical analysis is based on the emission and subsequent mass analysis of characteristic secondary ions which are ejected from a sample due to bombardment by a high energy (several KeV) ion beam. All elements and their isotopes can be detected by mass spectroscopy with a sensitivity in the ppm range, and for some elements in the ppb range. With this technique, ion images providing spatial elemental distribution of the sample can also be obtained with approximately -1 pm resolution. In-depth analysis can also, be performed. The in-depth analysis is accomplished by a controlled and gradual sputtering of the sample, and in-depth resolutions better than 100 A have been reported ( I ) .Results have been obtained for T a films sputtered in argon, argon-nitrogen, argon-oxygen mixtures, and for thermally oxidized films which demonstrate the unique capabilities of the technique for both bulk and surface analysis. Equations for quantitative analysis have been developed. These equations require the use of standards, are empirical, and are not based on a model of secondary ion emission. In addition, the capabilities and limitations of secondary ion emission for surface analysis are presented along with complementary results on surface impurities detected on similar tantalum films by Auger Electron Spectroscopy.

Effects of oxygen flooding on crater bottom composition and roughness in ultrashallow secondary ion mass spectrometry depth profilingDepth scale distortions in shallow implant secondary ion mass spectrometry profiles

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Computational methodology for analysis of the Soret effect in crystals: Application to hydrogen in palladium J. Appl. Phys. 112, 083516 (2012) Spectroscopic analysis of Al and N diffusion in HfO2 J. Appl. Phys. 112, 064118 (2012) Copper centers in copper-diffused n-type silicon measured by photoluminescence and deep-level transient spectroscopy Appl. Phys. Lett. 101, 042113 (2012) Bonding and diffusion of nitrogen in the InSbN alloys fabricated by two-step ion implantation Appl. Phys. Lett. 101, 021905 (2012) Shift of Ag diffusion profiles in CdTe by metal/semiconductor interfaces Appl.Depth ~rofil.es measured by secondary ion mass spectrometry have been used to compare boron d~ffuslOn from three different sources for temperatures ranging from 850 to 1050 °C. The so~rces mcluded boron in sit~ dop.ed and ion-implanted polycrystalline silicon as well as vapor usmg an evacuated capsule wIth hIghly doped powder. The junction depths and surface concentrations demonstrated little source dependence. Boltzmann-Matano analysis has been used to show that the concentration dependence of the diffusivity on source was minimal. We have clearly shown that conventional models of boron diffusion cannot fit the experimental data or the Boltzmann-Matano results, regardless of source. A new model has been used to describe the boron diffusion profiles more accurately.