Scapular winging is a rare debilitating condition that leads to limited functional activity of the upper extremity. It is the result of numerous causes, including traumatic, iatrogenic, and idiopathic processes that most often result in nerve injury and paralysis of either the serratus anterior, trapezius, or rhomboid muscles. Diagnosis is easily made upon visible inspection of the scapula, with serratus anterior paralysis resulting in medial winging of the scapula. This is in contrast to the lateral winging generated by trapezius and rhomboid paralysis. Most cases of serratus anterior paralysis spontaneously resolve within 24 months, while conservative treatment of trapezius paralysis is less effective. A conservative course of treatment is usually followed for rhomboid paralysis. To allow time for spontaneous recovery, a 6–24 month course of conservative treatment is often recommended, after which if there is no recovery, patients become candidates for corrective surgery.

Articles you may be interested inSurface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga-and Nface gallium nitride A plasma enhanced atomic layer deposition ͑PEALD͒ process was developed to deposit high-k dielectric constant materials using alternative metal t-butoxide and oxygen plasma exposures. The deposited thickness increased linearly with an increasing number of precursor/oxygen plasma cycles, and the growth rates of HfO 2 and ZrO 2 were determined to be 1.1 and 2.8 Å / cycle, respectively. The as-deposited films were determined to be fully oxidized and amorphous by the x-ray photoelectron spectroscopy ͑XPS͒ and Fourier transformed infrared spectroscopy ͑FTIR͒. The PEALD films were found to have high concentrations of bridging oxygen bonds with metals ͑M-O-M͒ as the film thickness increased, in contrast to the high concentrations of M-O-H in the films deposited by plasma enhanced chemical vapor deposition ͑PECVD͒. The M-O-M bonds in the PEALD films were further increased upon annealing at 250°C in atmosphere with a corresponding decrease in M-O-H concentrations, suggesting the elimination of hydroxyl groups upon annealing. The PEALD HfO 2 and ZrO 2 films showed higher dielectric constants ͑25, 22͒ than those of PECVD deposited films ͑21, 19͒, likely due to the enhanced ionic contribution from the M-O-M bonds in the PEALD films. The smallest equivalent oxide thickness ͑EOT͒ of 13 Å was achieved by PEALD HfO 2 with a leakage current density of 0.2 A / cm 2 , several orders of magnitude below that of thermally grown SiO 2 films with the same EOT.

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During routine anatomical dissection, a bilateral variation of the muscle subclavius was discovered with additional morphological features consistent with the muscle subclavius posticus. Attached medially to the first rib by tendon and to the clavicle by fibrous bands, the long triangular shaped muscle ran dorsal-laterally to attach onto the transverse scapular ligament and the coracoid process. The scapular insertion of the omohyoid muscle was just medial to this muscle, with some intermingling of fibers close to their insertions. In addition, the muscle on the left was split into two heads before inserting onto the scapula. Innervation was supplied by the nerve to the subclavius. We believe this muscle to be a hybrid of subclavius and subclavius posticus muscles, and we discuss the developmental origin of this rare subclavius variant, as well as the potential role this muscle may play in the development of thoracic outlet syndrome.

We demonstrate self-aligned fully-depleted III-V MOSFETs using CMOS-compatible device structures and manufacturable process flows. Processes with good manufacturability and scalability, such as, gate definition and spacer formation using RIE, and formation of self-aligned source/drain extensions (SDE) and self-aligned raised source/drain (RSD), have been established on III-Vs. We demonstrate short-channel devices down to gate length L G = 30 nm. Our best short-channel devices exhibit peak saturation transconductance G MSAT = 1140 μS/μm at L G = 60 nm and supply voltage V DD = 0.5 V. I. INTRODUCTIONIn the last decade, there has been a renewed interest in III-V materials as a possible replacement of Si as the MOSFET channel because many III-V materials have low electron effective mass m*, high electron mobility μ, and high ballistic velocity v B [1]. Most III-V devices focus on the MOS-HEMT structure [2]-[7], which is a good test vehicle for evaluating the upper limit of III-V FET performance as MOS-HEMT fabrication uses the least-damaging process conditions. MOSHEMTs are, however, not CMOS compatible due to large overlap capacitance induced by thin high-κ dielectric between the gate and RSD, which results in larger circuit delay (Fig. 1). Furthermore, MOS-HEMTs are typically underlapped, which leads to high series resistance R EXT , unless a δ-doping layer is present, which degrades L G scalability [7].In this work, we focus on devices and processes that are CMOS compatible and manufacturable, and include multiple RIE, self-aligned SDEs, and self-aligned RSD. In addition, we use In 0.53 Ga 0.47 As as the channel material instead of In 0.7 Ga 0.3 As or InAs or InSb [2]-[11] because In 0.53 Ga 0.47 As will lead to lower leakage current at L G = 10 nm due to reduced direct source-to-drain tunneling and band-to-band tunneling, even when quantization is taken into account ( Fig. 2(a)). Furthermore, In 0.53 Ga 0.47 As might have electron m* that will provide a better trade-off between density-of-states capacitance C DOS and ballistic velocity v B , thereby optimizing on-current I ON at L G = 10 nm ( Fig. 2(b)) [12].