Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films

Lao, S.; Martin, Ryan M.; Chang, Jane P.

doi:10.1116/1.1894666

Cited by 71 publications

(21 citation statements)

References 61 publications

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“…1-3 They are very suitable for high dielectric constant (high-k) materials, allowing for reduced leakage current and improved equivalent oxide thickness (EOT). 4,5 So far, high-k material research has focused on rare earth-based oxides, [6][7][8][9] mainly Hf-based and their stacked binary alloy gate structures. The most popular of these oxides is HfO 2 , which has a relatively high dielectric constant and a wide energy gap with good thermal stability.…”

Section: Introductionmentioning

confidence: 99%

Characterization of HfO2/La2O3 layered stacking deposited on Si substrate

Cao

Cheng

Jia

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Two-layer and four-layer HfO2/La2O3 stacked structures were grown on a Si substrate by plasma enhanced atomic layer deposition at 200 °C. High resolution transmission electron microscopy results indicated that both films were amorphous with no crystals. Based on atomic force microscopy, the roughness of both films was 0.1 nm. X-ray photoelectron spectroscopy spectra indicated that the interfacial layer of the films was most likely composed of Hf-Si-O and La-Si-O. At a gate bias of |Vg − Vfb| = 1 V, the leakage current densities of the two-layer and four-layer films were 0.02 and 0.01 mA/cm2, respectively. The equivalent oxide thicknesses of the stacked structures were 1.2 and 1.5 nm, respectively. The density of interfacial states between dielectric and substrate was calculated to be 1.71 × 1012 and 1.32 × 1012 eV−1cm−2 for the two- and four-layer films, respectively.

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Section: Introductionmentioning

confidence: 99%

Characterization of HfO2/La2O3 layered stacking deposited on Si substrate

Cao

Cheng

Jia

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…ZrO 2 is an important material, which possesses interesting properties such as large resistance against oxidation, high melting point (2,715 ∘ C), excellent thermal stability, and good ionic conductivity in the Y-stabilized cubic phase. For example, ZrO2 thin film is a promising candidate to replace silicon dioxide as the gate dielectric in complementary metal-oxidesemiconductor technology [5][6][7][8][9][10][11][12][13][14][15]. It is an electrical insulating material with a band gap of 5 eV and has potential use as an alternative material for storage capacitors in dynamic random access memories.…”

Section: Introductionmentioning

confidence: 99%

Determination of Optical Properties of Thin Films from Ketteler-Helmholtz Dispersion Relations: Application to the Case of Ultraviolet Irradiated Zirconium Oxide

Desforges

Robichaud

Gauvin

2017

Advances in Materials Science and Engineering

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A new method based on the Ketteler-Helmholtz dispersion relations is described. This method allows accurately determining the optical properties of thin films from a single transmittance curve. The case of zirconium oxide thin film postdeposition irradiated with ultraviolet light is analysed. The effect of ultraviolet irradiation is compared with low temperature postdeposition heating. It is shown that both processes have a comparable effect on the optical properties of the films. However, as our analysis leads to inferring that ultraviolet irradiation produces smoother film surfaces, the use of ultraviolet irradiation is an interesting alternative to the heating process. Accordingly, the reduction of light scattering from the interface with air provides films of better optical quality, which is especially valuable in case of multilayer systems.

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“…Same type of conclusion was also performed with Zr tetra-tert-butoxide [Zr[OC(CH 3 ) 3 ] 4 ] precursor which appeared less than ideal in PEALD processes due to a decomposition at low temperature. 12,[22][23][24] A higher amount of interface defects was measured when using Zr[OC(CH 3 ) 3 ] 4 rather than Zr(N(C 2 H 5 ) 2 ) 4 as precursor. 23 Because the stability and reactivity of precursors are essential in ALD / PEALD processes, the investigation of alternative precursors remains of high interest.…”

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confidence: 99%

ZrO₂Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium

Salaün

Veillerot

Ferris

et al. 2014

ECS J. Solid State Sci. Technol.

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In this paper, we report the growth of ZrO 2 thin films on TiN substrates using Plasma Enhanced Atomic Layer Deposition (PEALD) process starting from cyclopentadienyltris(dimetylamino)zirconium and oxygen plasma as precursor and reactant, respectively. The material properties -structure, morphology and composition -are investigated as a function of process parameters such as number of cycles, deposition temperature and plasma conditions. Electrical performances -in terms of breakdown field and leakage currents -are investigated as a function of deposition temperature on Au/ZrO 2 /TiN capacitors, giving an evidence for an impact of the crystallinity and impurities.With the continuous downscaling of integrated circuits (ICs), the replacement of SiO 2 or Si 3 N 4 standard dielectrics by a high κ material, i.e. a material with a higher dielectric constant, has emerged recently. This solution allows for instance keeping large capacitance density with oxide thickness reduction. Among these high κ materials, transition metal oxides such as HfO 2 , ZrO 2 , Ta 2 O 5 and others have been widely proposed and recently reviewed 1 for integration in complementary metal oxide semiconductor (CMOS) devices as well as metal insulator metal (MIM) capacitors, and resistive random access memory (RRAM) applications. 2 For MIM devices, ZrO 2 is preferred for its capacitance density and leakage current, 3 strongly influenced by intrinsic properties such as crystallinity and interface quality. 4 The permittivity of such dielectric depends on its crystalline structure, reaching the value of 47 in the tetragonal phase. 5 In addition, ZrO 2 presents a large bandgap (around 5.5 eV). 6 As a consequence, the main criteria for MIM capacitances, such as low leakage currents, voltage linearity and high breakdown voltage can be achieved. The physical and chemical properties of high κ oxides are also important in oxide based RRAM devices, where the material structure and composition are influent parameters for the switching. 7 In these above ICs applications (RF capacitors, RRAM), from a process integration point of view, the high κ thin films (usually less than 50 nm thick, even less than 10 nm) should be deposited at low temperature (in most cases less than 400 • C) in order to avoid the degradation of the CMOS and metallic lines.Among the various possibilities existing for the growth of high κ thin layers, Atomic Layer Deposition (ALD) is considered as the more appropriated technique because it can produce high quality materials with an excellent control of the thickness, especially for thin films. 8 Various Zr precursors, such as halides, 8 alkyls and alkylamides, 9 β-diketonates 10 and cyclopentadienyl 10,11 have already been investigated for the ALD ZrO 2 growth. The ZrCl 4 / H 2 O combination has been first used in the 180 • -600 • C temperature range 12 and different crystallographic states (with crystalline cubic, monoclinic or tetragonal phases) could be obtained by varying the deposition conditions. 13 However, the presence of chlorine c...

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Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films

Cited by 71 publications

References 61 publications

Characterization of HfO2/La2O3 layered stacking deposited on Si substrate

Characterization of HfO2/La2O3 layered stacking deposited on Si substrate

Determination of Optical Properties of Thin Films from Ketteler-Helmholtz Dispersion Relations: Application to the Case of Ultraviolet Irradiated Zirconium Oxide

ZrO₂Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium

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Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films

Cited by 71 publications

References 61 publications

Characterization of HfO2/La2O3 layered stacking deposited on Si substrate

Characterization of HfO2/La2O3 layered stacking deposited on Si substrate

Determination of Optical Properties of Thin Films from Ketteler-Helmholtz Dispersion Relations: Application to the Case of Ultraviolet Irradiated Zirconium Oxide

ZrO2Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium

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ZrO₂Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium