Free-standing graphene is inherently crumpled in the out-of-plane direction due to dynamic flexural phonons and static wrinkling. We explore the consequences of this crumpling on the effective mechanical constants of graphene. We develop a sensitive experimental approach to probe stretching of graphene membranes under low applied stress at cryogenic to room temperatures. We find that the in-plane stiffness of graphene is 20–100 N m−1 at room temperature, much smaller than 340 N m−1 (the value expected for flat graphene). Moreover, while the in-plane stiffness only increases moderately when the devices are cooled down to 10 K, it approaches 300 N m−1 when the aspect ratio of graphene membranes is increased. These results indicate that softening of graphene at temperatures <400 K is caused by static wrinkling, with only a small contribution due to flexural phonons. Together, these results explain the large variation in reported mechanical constants of graphene devices and pave the way towards controlling their mechanical properties.

We investigated the effect of out-of-plane crumpling on the mechanical response of graphene membranes. In our experiments, stress was applied to graphene membranes using pressurized gas while the strain state was monitored through two complementary techniques: interferometric profilometry and Raman spectroscopy. By comparing the data obtained through these two techniques, we determined the geometric hidden area which quantifies the crumpling strength. While the devices with hidden area ∼0% obeyed linear mechanics with biaxial stiffness 428±10  N/m, specimens with hidden area in the range 0.5%-1.0% were found to obey an anomalous nonlinear Hooke's law with an exponent ∼0.1.

There is a recent surge of interest in amplification and detection of tiny motion in the growing field of opto and electro mechanics. Here, we demonstrate widely tunable, broad bandwidth and high gain all-mechanical motion amplifiers based on graphene/Silicon Nitride (SiNx) hybrids. In these devices, a tiny motion of a large-area SiNx membrane is transduced to a much larger motion in a graphene drum resonator coupled to SiNx. Furthermore, the thermal noise of graphene is reduced (squeezed) through parametric tension modulation. The parameters of the amplifier are measured by photothermally actuating SiNx and interferometrically detecting graphene displacement. We obtain displacement power gain of 38 dB and demonstrate 4.7 dB of squeezing resulting in a detection sensitivity of 3.8 fm/ √ Hz, close to the thermal noise limit of SiNx.

High quality factor mechanical resonators have shown great promise in the development of classical and quantum technologies. Simultaneously, progress has been made in developing controlled mechanical nonlinearity. Here, we combine these two directions of progress in a single platform consisting of coupled silicon nitride (SiNx) and graphene mechanical resonators. We show that nonlinear response can be induced on a large area SiNx resonator mode and can be efficiently controlled by coupling it to a gate-tunable, freely suspended graphene mode. The induced nonlinear response of the hybrid modes, as measured on the SiNx resonator surface is giant, with one of the highest measured Duffing constants. We observe a novel phononic frequency comb which we use as an alternate validation of the measured values, along with numerical simulations which are in overall agreement with the measurements.

We present data on emission of K-shell radiation from Ti foils irradiated with sub-picosecond pulses of second harmonic radiation (527nm) from the TARANIS laser system at intensities of up to 10 18 Wcm −2 . The data is used to demonstrate that a resonance absorption type mechanism is responsible for absorption of the laser light and to estimate fast electron temperatures of 30-60keV that are in broad agreement with expectation from models of absorption for a steep density gradient. Data taken with resin-backed targets are used to demonstrate clear evidence of electron refluxing even at the modest fast electron temperatures inferred.