Photonic systems and technologies traditionally relegated to table-top experiments are poised to make the leap from the laboratory to real-world applications through integration, leading to a dramatic decrease in size, weight, power, and cost 1 . In particular, photonic integrated ultra-narrow linewidth lasers are a critical component for applications including coherent communications 2 , metrology 3-5 , microwave photonics 6 , spectroscopy 7 , and optical synthesizers 1 . Stimulated Brillouin scattering (SBS) lasers, through their unique linewidth narrowing properties 8 , are an ideal candidate to create highly-coherent waveguide integrated sources. In particular, cascaded-order Brillouin lasers show promise for multi-line emission 14 , low-noise microwave generation 6 and other optical comb applications. To date, compact, very-low linewidth SBS lasers have been demonstrated using discrete, tapered-fiber coupled chip-scale silica 9,10 or CaF2 11 microresonators. Photonic integration of these lasers can dramatically improve their stability to environmental and mechanical disturbances, simplify their packaging, and lower cost through wafer-scale photonics foundry processes. While single-order silicon 12 and cascade-order chalcogenide 13 waveguide SBS lasers have been demonstrated, these lasers produce modest emission linewidths of 10-100 kHz and are not compatible with waferscale photonics foundry processes. Here, we report the first demonstration of a sub-Hz (~0.7 Hz) fundamental linewidth photonic-integrated Brillouin cascaded-order laser, representing a significant advancement in the state-of-the-art in integrated waveguide SBS lasers. This laser is comprised of a bus-ring resonator fabricated using an ultra-low loss (< 0.5 dB/m) Si3N4 waveguide platform. To achieve a sub-Hz linewidth, we leverage a high-Q, large mode volume, single polarization mode resonator that produces photon generated acoustic waves without phonon guiding. This approach greatly relaxes phase matching conditions between polarization modes and optical and acoustic modes. By using a theory for cascaded-order Brillouin laser dynamics 14 , we determine the fundamental emission linewidth of the first Stokes order by measuring the beat-note linewidth between and the relative powers of the first and third Stokes orders. Extension of these high performance lasers to the visible and near-IR wavebands is possible due to the low optical loss of silicon nitride waveguides from 405 nm to 2350 nm 15 , paving the way to photonic-integrated sub-Hz lasers for visible-light applications including atomic clocks and precision spectroscopy.

We use general concepts of statistical mechanics to compute the quantum frictional force on an atom moving at constant velocity above a planar surface. We derive the zero-temperature frictional force using a non-equilibrium fluctuation-dissipation relation, and show that in the large-time, steady-state regime quantum friction scales as the cubic power of the atom's velocity. We also discuss how approaches based on Wigner-Weisskopf and quantum regression approximations fail to predict the correct steady-state zero temperature frictional force, mainly due to the low frequency nature of quantum friction.Comment: 5+1 pages, 1 figur

Brillouin laser oscillators offer powerful and flexible dynamics as the basis for mode-locked lasers, microwave oscillators, and optical gyroscopes in a variety of optical systems. However, Brillouin interactions are markedly weak in conventional silicon photonic waveguides, stifling progress toward silicon-based Brillouin lasers. The recent advent of hybrid photonic-phononic waveguides has revealed Brillouin interactions to be one of the strongest and most tailorable nonlinearities in silicon. In this study, we have harnessed these engineered nonlinearities to demonstrate Brillouin lasing in silicon. Moreover, we show that this silicon-based Brillouin laser enters a regime of dynamics in which optical self-oscillation produces phonon linewidth narrowing. Our results provide a platform to develop a range of applications for monolithic integration within silicon photonic circuits.